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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SOIC
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:10V ~ 20V
- Logic Voltage - VIL, VIH:0.8V, 2.3V
- Current - Peak Output (Source, Sink):250mA, 500mA
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):85ns, 35ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):600 V
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Overview
The NCP5106BDR2G is a high-voltage half-bridge gate driver IC manufactured by onsemi, designed for direct drive of two N-channel power MOSFETs or IGBTs. It operates within a supply voltage range of -300 mV to 20 V and delivers an output current of 500 mA. The device features rise and fall times of 85 ns and 35 ns, respectively, with a working supply current of 5 mA. It supports logic voltages of 700 mV and functions reliably across an operating temperature range from -40 °C to +125 °C. Packaged in SOIC-8 surface-mount format, it includes internal cross-conduction protection.
Feature Summary
- Provides dedicated outputs for driving two N-channel power MOSFETs or IGBTs in a half-bridge configuration
- Integrates fixed internal dead-time to prevent cross-conduction between high-side and low-side switches
- Utilizes bootstrap technology to ensure correct high-side power switch driving
- Features independent logic inputs compatible with standard control interfaces
Applications
- Half-bridge power converters
- Complementary drive converters such as asymmetric half-bridge topologies
- Active clamp converter circuits
- Electronic ballast drivers
Procurement Notes
Verify the specific suffix DR2G confirms the SOIC-8 tape-and-reel packaging variant. Confirm RoHS compliance status through official manufacturer documentation before integration. Ensure input signal levels match the specified logic thresholds for reliable operation within the defined temperature range.
Selection Notes
Select this component when a half-bridge topology requiring integrated cross-conduction protection is necessary. It is suitable for applications needing direct drive of N-channel devices without external timing components. Consider the SOIC-8 package constraints and thermal dissipation requirements relative to the 500 mA output capability.
Part Context
This part belongs to the NCP5106 series of high-voltage gate drivers. The 'B' designation indicates the half-bridge version with built-in dead-time, distinguishing it from the 'A' version which offers independent inputs for flexible high-side/low-side configurations. It serves as a specialized solution for compact power conversion designs.
Replacement Considerations
NCP5106ADR2G: Offers independent inputs instead of fixed dead-time; verify if external dead-time generation is acceptable.
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