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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SOIC
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:10V ~ 20V
- Logic Voltage - VIL, VIH:0.8V, 2.3V
- Current - Peak Output (Source, Sink):250mA, 500mA
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):85ns, 35ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):200 V
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Overview
The NCP5109BDR2G is a high-voltage half-bridge MOSFET driver manufactured by onsemi. It operates with a supply voltage range of 10 V to 20 V and supports bootstrap operation for high-side driving. The device features independent inputs for the high-side and low-side drivers, allowing flexible control configurations. It provides peak output currents of 2 A source and 4 A sink to ensure fast switching transitions. The component is housed in an SOIC-8 package and is designed for robust performance in industrial and power conversion applications.
Feature Summary
- Integrated high-voltage half-bridge architecture supporting bootstrap drive
- Independent high-side and low-side input controls
- High peak output current capability for rapid MOSFET switching
Applications
- Industrial motor drives
- Power supply circuits
- Inverter systems
Procurement Notes
Verify the specific suffix 'BDR2G' against the manufacturer's official datasheet to confirm pinout compatibility and electrical specifications. Ensure that the ordering information matches the exact package type and tape-and-reel configuration required for your assembly process. Cross-reference the part number with the latest revision history to account for any manufacturing changes or updates.
Selection Notes
Select this component when a dedicated half-bridge driver with high-voltage tolerance is required. Consider the 2 A source and 4 A sink output currents relative to the gate charge of the target MOSFETs. Evaluate the SOIC-8 package constraints against available PCB space and thermal management requirements for the intended application environment.
Part Context
This part belongs to the NCP5109 series of high-voltage gate drivers from onsemi. It is engineered for driving power MOSFETs in half-bridge topologies. The series is commonly utilized in applications requiring reliable isolation between control logic and high-power switching elements within compact integrated solutions.
Replacement Considerations
Consult the manufacturer's cross-reference documentation for verified alternative part numbers. Ensure any substitute maintains identical pinout assignments and electrical characteristics to guarantee circuit compatibility without redesign.
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