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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 10DFN
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Tape & Reel (TR),Bulk
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:10V ~ 20V
- Logic Voltage - VIL, VIH:0.8V, 2.3V
- Current - Peak Output (Source, Sink):250mA, 500mA
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):85ns, 35ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:10-VFDFN Exposed Pad
- Supplier Device Package:10-DFN (3x3)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):200 V
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Overview
The NCP5109BMNTWG is a high-voltage gate driver IC designed for direct drive of two N-channel power MOSFETs or IGBTs. It features a non-inverting half-bridge configuration with independent high-side and low-side outputs. The device operates within a supply voltage range of 10 V to 20 V and supports peak output currents of 2 A source and 4 A sink. It includes built-in under-voltage lockout (UVLO) protection and latch-up immunity, ensuring reliable operation in industrial motor drives and power conversion applications.
Feature Summary
- Provides dual isolated outputs for driving high-side and low-side power switches
- Incorporates under-voltage lockout mechanisms to prevent improper switching states
- Features robust latch-up immunity for enhanced reliability in harsh environments
Applications
- Industrial motor drives
- Power supply circuits
- Inverter systems
Procurement Notes
Verify the specific suffix BMNTWG to confirm the 10-DFN package and tape-and-reel packaging format. Ensure compatibility with your PCB footprint dimensions of 3x3 mm. Confirm that the component meets RoHS compliance standards required for your manufacturing process. Cross-reference the datasheet revision date to ensure alignment with current design specifications.
Selection Notes
Select this component when a compact half-bridge driver is required for medium-power applications. The 10-DFN package offers a small footprint suitable for space-constrained designs. Consider the 2A/4A output current capability against the gate charge requirements of the target MOSFETs or IGBTs. Verify that the operating temperature range meets the environmental conditions of the final assembly.
Part Context
This part belongs to the NCP5109 family of high-voltage gate drivers from onsemi. The family provides solutions for driving power semiconductors in various topologies. The BMNTWG variant specifically denotes the DFN package option, distinguishing it from other pin-out configurations available in the broader product line.
Replacement Considerations
Check for NCP5109 variants with different package outlines if mechanical constraints change. Verify electrical equivalence regarding UVLO thresholds and propagation delays before substitution.
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