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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SOIC
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Synchronous
- Number of Drivers:2
- Gate Type:IGBT, MOSFET (N-Channel)
- Voltage - Supply:10V ~ 20V
- Logic Voltage - VIL, VIH:0.8V, 2.3V
- Current - Peak Output (Source, Sink):250mA, 500mA
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):85ns, 35ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):600 V
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Overview
The NCP5111DR2G is a high-voltage half-bridge gate driver manufactured by onsemi, designed for driving MOSFETs and IGBTs. It operates with a supply voltage range of 10 V to 20 V and supports high-side voltages up to 600 V. The device features two drivers in an SOIC-8 package, providing source/sink currents of 250 mA / 500 mA. Key electrical parameters include propagation delays of 85 ns (rise) and 35 ns (fall), with an internal fixed dead time of 650 ns. It functions within a temperature range of -40 °C to +125 °C.
Feature Summary
- High dV/dt immunity ensures reliable operation in noisy environments.
- Integrated internal fixed dead time prevents shoot-through conditions.
- Compatible with 3.3 V and 5 V input logic levels.
- Extended negative bridge pin voltage swing capability.
Applications
- Motor control systems
- Power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix DR2G confirms the SOIC-8 surface-mount packaging and tape-and-reel quantity when sourcing. Confirm RoHS compliance status through official manufacturer documentation or authorized distributors. Ensure the component is sourced from verified channels to guarantee authenticity and traceability for industrial applications.
Selection Notes
Select this component for designs requiring robust high-voltage switching with integrated dead-time management. It is suitable for applications needing compatibility with standard logic inputs while driving power devices at voltages up to 600 V. Consider the SOIC-8 package constraints and thermal performance relative to the expected load current and ambient operating conditions.
Part Context
This part belongs to the NCP5111 series of high-voltage half-bridge gate drivers. It shares functional similarities with other members like the NCP5104 but offers specific output current characteristics and internal timing features tailored for general-purpose power switching applications.
Replacement Considerations
Check datasheets for compatible alternatives such as the NCP5104DR2G or NCP5304DR2G. Verify that substitute parts match the required supply voltage range, output drive strength, and package dimensions before integration.
FAQ
What is the maximum high-side voltage supported?
The device supports high-side voltages up to 600 V.
Does the driver include built-in protection against simultaneous conduction?
Yes, it includes one input with an internal fixed dead time of 650 ns.
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