NCP51401MNTXG

NCP51401MNTXG

  • Description:IC REG LDO DDR 1OUT 10DFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:f07e68d4ccf9 Category: Brand:

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Product Detailed Parameters

  • Description:IC REG LDO DDR 1OUT 10DFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Applications:LDO (Linear), DDR
  • Voltage - Input:2.375V ~ 5.5V
  • Number of Outputs:1
  • Voltage - Output:0.5V ~ 1.8V
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Surface Mount
  • Package / Case:10-VFDFN Exposed Pad
  • Supplier Device Package:10-DFN (3x3)
  • Grade:-
  • Qualification:-

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NCP51401MNTXG

Overview

The NCP51401MNTXG is a source/sink dual data rate (DDR) termination regulator designed for low input voltage, low noise, and space-constrained systems. It features integrated power MOSFETs to minimize external component count. The device supports an input voltage range of 2.375 V to 5.5 V and delivers up to 3 A output current. It maintains fast transient response with a minimum output capacitance of 20 μF. Operating temperatures range from -40°C to +125°C.

Feature Summary

  • Integrated source and sink power MOSFETs reduce board space and component count
  • Supports remote sensing for accurate DDR VTT bus termination regulation
  • Includes droop compensation to minimize error voltage during transients
  • Enables use of smaller output capacitors while maintaining performance

Applications

  • DDR memory termination in high-performance computing systems
  • Low-power chipset core voltage regulation
  • Graphics processor core power delivery
  • Space-constrained server and workstation designs

Procurement Notes

Verify the complete part number including suffixes such as 'MNTXG' against official onsemi documentation to ensure correct packaging and tape specifications. Confirm RoHS compliance status through the manufacturer's latest environmental reports. Cross-reference the datasheet revision date to validate technical parameters before integration into design files.

Selection Notes

Select this component when designing systems requiring precise DDR termination with minimal output capacitance requirements. The integrated MOSFET architecture suits applications where PCB area is limited. Ensure the input voltage rail falls within the specified operational range. Consider the thermal performance characteristics relative to the expected load current and ambient operating conditions.

Part Context

This device belongs to the NCP5140x series of specialized power management ICs focused on memory termination. It complements other regulators in the portfolio by addressing specific DDR interface requirements. The series targets modern computing platforms demanding high efficiency and compact form factors for memory subsystem power delivery.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

NCP51401MNTXGNCP51401MNTXG

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