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NCP51530ADR2G is listed in the Full Half-Bridge (H Bridge) Drivers range at ChipApex. The manufacturer field lists onsemi. Its product description is IC HALF BRIDGE DRIVER 2A 8SOIC. Review the specifications below when checking this part for your BOM.
The NCP51530ADR2G is a high-side and low-side gate driver manufactured by onsemi, designed for AC-DC power supplies and inverters. It features a dual half-bridge output configuration with a peak output current of 2A per channel. The device supports a supply voltage range of 10V to 17V and withstands load voltages up to 700V. It operates within a junction temperature range of -40°C to 125°C and is housed in an 8-SOIC surface-mount package.
Verify the specific suffix 'ADR2G' against the official datasheet to confirm it corresponds to the standard propagation delay variant rather than the faster B-series version. Ensure the ordering code matches the required packaging format, such as tape and reel or cut tape, as specified by the distributor. Confirm RoHS compliance status if restricted substances are a constraint for the target assembly process.
Select this component when designing for moderate switching frequencies where its typical 50 ns propagation delay is sufficient. It is suitable for applications requiring 700V isolation and 2A drive strength. Consider alternative variants if sub-25 ns timing precision is mandatory for the specific topology. Evaluate thermal performance based on the SOIC-8 package constraints under continuous high-frequency operation.
This part belongs to the NCP51530 family of 700V gate drivers from onsemi. The A-series designation typically indicates a standard propagation delay profile compared to the B-series which offers faster switching speeds. The family is engineered to reduce level-shift losses, addressing efficiency challenges in high-frequency power conversion architectures.
NCP51530BDR2G: Offers reduced propagation delay but requires verification of timing compatibility.
The NCP51530A series, which includes the ADR2G variant, has a typical propagation delay of 50 ns.
Yes, the device is specified for driving both power MOSFETs and IGBTs in half-bridge configurations.
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