NCP51705MNTXG

Overview

The NCP51705MNTXG is a single-channel, non-isolated gate driver designed for Silicon Carbide (SiC) MOSFETs. It features a 6A peak output current and operates within a supply voltage range of 22V to 22V. The device utilizes a WQFN-24 package with dimensions of 4mm x 4mm x 0.95mm. It supports switching frequencies up to 1MHz with rise and fall times of 15ns. The operational temperature range spans from -40°C to 125°C.

Feature Summary

• Optimized for driving SiC MOSFET transistors with high-speed performance
• Provides robust 6A output current capability for efficient switching
• Designed for surface-mount installation in compact power modules

Applications

• Silicon Carbide (SiC) power module integration
• High-frequency DC-DC converters
• Industrial motor drives

Procurement Notes

Verify the specific suffix 'MNTXG' against the manufacturer's official datasheet to confirm tape-and-reel packaging and quantity specifications. Ensure compatibility with the target PCB footprint for the WQFN-24 package. Cross-reference thermal requirements with system design constraints.

Selection Notes

Select this component when driving SiC MOSFETs requiring a single-channel, non-isolated interface. The 6A drive strength suits moderate-power applications. Consider the 22V supply requirement and non-isolated topology during circuit design. Evaluate thermal dissipation needs given the small QFN package size.

Part Context

This part belongs to the NCP51705 series of gate drivers. It is distinct from isolated variants like the NCP51752. The series targets high-efficiency power conversion systems utilizing wide-bandgap semiconductors. It complements onsemi's broader portfolio of SiC devices and controllers.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout and electrical characteristics before considering any alternative components.