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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 15QFN
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Single
- Number of Drivers:1
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:9V ~ 17V
- Logic Voltage - VIL, VIH:-
- Current - Peak Output (Source, Sink):1A, 2A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):2ns, 1.5ns
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:15-VFQFN
- Supplier Device Package:15-QFN (4x4)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):150 V
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Overview
The NCP51810AMNTWG is a high-speed half-bridge gate driver designed for Gallium Nitride (GaN) power switches. It operates within a supply voltage range of 9 V to 17 V and delivers peak output currents of 2 A. The device features ultra-fast switching capabilities with rise and fall times of 1 ns each. It is housed in a QFN-15 package and supports junction isolation for high-voltage applications, functioning reliably across an operating temperature range from -40 °C.
Feature Summary
- Optimized specifically for driving GaN power switches with high-speed performance
- Provides independent high-side and low-side driver outputs
- Utilizes junction isolation technology for robust high-voltage operation
Applications
- High-frequency DC-DC converters utilizing GaN transistors
- Power supplies requiring fast switching speeds and compact form factors
- Industrial motor drives employing wide-bandgap semiconductors
Procurement Notes
Verify the specific ordering suffix AMNTWG to ensure the correct QFN-15 package variant is selected. Confirm that the application circuitry matches the 9 V to 17 V supply requirements. Ensure thermal management strategies align with the QFN-15 package characteristics for reliable operation under load conditions specified in the official datasheet.
Selection Notes
Select this component when designing circuits that require precise control of GaN FETs with minimal propagation delay. The 1 ns transition times make it suitable for high-efficiency power conversion topologies. Consider the QFN-15 footprint for PCB layout constraints and verify compatibility with the intended switching frequency and voltage levels.
Part Context
This part belongs to onsemi's NCP518xx series of half-bridge drivers tailored for modern wide-bandgap devices. Unlike traditional silicon-based drivers, this model addresses the unique speed and voltage transient requirements of GaN technology. It serves as a critical interface component between control logic and high-power switching elements in advanced power electronics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
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