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NCP5181DR2G
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Product Detailed Parameters
- Description：IC GATE DRVR HALF-BRIDGE 8SOIC
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration：Half-Bridge
- Channel Type：Independent
- Number of Drivers：2
- Gate Type：MOSFET (N-Channel)
- Voltage - Supply：10V ~ 20V
- Logic Voltage - VIL, VIH：0.8V, 2.3V
- Current - Peak Output (Source, Sink)：1.4A, 2.2A
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：40ns, 20ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：600 V
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Overview
The NCP5181DR2G is a high-voltage half-bridge gate driver manufactured by onsemi. It features independent high-side and low-side outputs housed in an SOIC-8 package. The device supports a supply voltage range of 9 V to 18 V and delivers a peak output current of 4.3 A. It exhibits rise and fall times of 12 ns with maximum propagation delays of 200 ns. Operating temperatures span from -40 °C to +125 °C, and the component is qualified to AEC-Q100 standards for automotive applications.
Feature Summary
- Provides independent high-side and low-side drive outputs for half-bridge configurations
- Capable of sourcing and sinking 4.3 A peak output current
- Automotive qualified to AEC-Q100 standards
Applications
- High-voltage MOSFET and IGBT gate driving
- Automotive power electronics systems
- Industrial motor control applications
Procurement Notes
Verify the specific part number against official manufacturer documentation to confirm compatibility with your design requirements. Ensure that the SOIC-8 package dimensions and pinout match your PCB layout specifications. Confirm that the operating temperature range and electrical parameters align with your system's environmental and performance constraints before finalizing procurement decisions.
Selection Notes
Select this component when a robust half-bridge driver with high current capability is required for high-voltage switching applications. The AEC-Q100 qualification makes it suitable for automotive environments. Consider the 18 V maximum supply voltage and 600 V blocking capability when designing circuits involving high-side switches. Verify that the 12 ns switching speeds meet the timing requirements of your target application.
Part Context
This component belongs to the NCP518x series of gate drivers from onsemi, designed for high-voltage power switching applications. The series includes variants tailored for different current capabilities and packaging options. The NCP5181DR2G specifically targets applications requiring reliable half-bridge driving with automotive reliability standards, distinguishing it from lower-performance or non-automotive grade alternatives in the broader portfolio.
Replacement Considerations
The NCV5183DR2G is a confirmed substitute within the same family, sharing identical electrical characteristics and pinout while meeting automotive qualification standards.
