NCP51820AMNTWG

NCP51820AMNTWG

$2.71
  • Description:IC GATE DRVR HALF-BRIDGE HI SPD
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:4012e815e1c8 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HALF-BRIDGE HI SPD
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:Half-Bridge
  • Channel Type:Independent
  • Number of Drivers:-
  • Gate Type:MOSFET (N-Channel, P-Channel)
  • Voltage - Supply:9V ~ 17V
  • Logic Voltage - VIL, VIH:-
  • Current - Peak Output (Source, Sink):1A, 2A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):2ns, 1.5ns
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:15-VFQFN
  • Supplier Device Package:15-QFN (4x4)
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):670 V

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NCP51820AMNTWG

Overview

The NCP51820AMNTWG is a high-performance, non-inverting half-bridge gate driver designed for driving Gallium Nitride (GaN) power switches. It features junction isolation with a maximum voltage rating of 670 V and operates within a supply voltage range of 9 V to 17 V. The device provides peak output currents of 1 A for the high-side and 2 A for the low-side channels. It achieves fast switching speeds with typical rise and fall times of 2 ns and 1.5 ns, respectively. Packaged in a 15-pin QFN (4x4 mm) surface-mount format, it supports an operating junction temperature up to 150°C.

Feature Summary

  • Optimized for driving high-voltage E-mode GaN transistors in totem pole configurations
  • Provides galvanic isolation between high-side and low-side circuits via junction isolation technology
  • Features non-inverting logic inputs for simplified control interface design
  • Delivers asymmetric drive strength with distinct current capabilities for high-side and low-side outputs

Applications

  • LLC resonant converters
  • Phase-shifted full-bridge topologies
  • Totem pole Power Factor Correction (PFC)
  • Active clamp flyback and forward converters
  • Dual active-bridge and Phi-2 isolated DC-DC converters

Procurement Notes

Verify that the ordering suffix matches the required tape and reel configuration for automated assembly processes. Confirm that the component meets RoHS compliance standards if mandated by the end-product regulations. Ensure the selected package variant aligns with the thermal management strategy and PCB footprint constraints defined in the layout guidelines.

Selection Notes

Select this driver when designing systems requiring high-speed switching of 650V GaN devices with minimal propagation delay. The asymmetric output current capability allows for optimized turn-on and turn-off characteristics tailored to specific GaN FET requirements. Consider the 150°C junction temperature limit for high-density industrial applications where ambient temperatures may be elevated.

Part Context

This component belongs to onsemi's dedicated GaN driver family, which includes variants like the NCP51810 for lower voltage applications. It serves as a critical interface between low-voltage control logic and high-voltage wide-bandgap power switches, enabling efficient power conversion in modern compact power supplies.

Replacement Considerations

Direct substitutes include other onsemi half-bridge drivers rated for similar voltages, such as the NCP5183 or NCP51810, provided the voltage ratings and pinout compatibility are verified against the specific application requirements.

NCP51820AMNTWGNCP51820AMNTWG
$2.71
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