NCP5183DR2G

NCP5183DR2G

$3.41
  • Description:IC GATE DRVR HALF-BRIDGE 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:e95cbe94e92f Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HALF-BRIDGE 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:Half-Bridge
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:9V ~ 18V
  • Logic Voltage - VIL, VIH:1.2V, 2.5V
  • Current - Peak Output (Source, Sink):4.3A, 4.3A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):12ns, 12ns
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):600 V

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NCP5183DR2G

Overview

The NCP5183DR2G is a high-voltage half-bridge gate driver manufactured by onsemi, designed for driving high-side and low-side MOSFETs or IGBTs. It operates within a supply voltage range of 9 V to 18 V and delivers an output current capability of 4.3 A. The device features fast switching characteristics with rise and fall times of 12 ns, and propagation delays up to 200 ns. It is housed in an SOIC-8 surface-mount package and supports junction isolation. The component is qualified to the AEC-Q100 automotive standard and functions reliably across an operating temperature range from -40 °C to +125 °C.

Feature Summary

  • Automotive qualification compliant with AEC-Q100 standards for reliability in vehicle applications.
  • High-voltage operation capability supporting up to 600 V bridge configurations.
  • Independent high-side and low-side drive outputs for precise half-bridge control.

Applications

  • Automotive power electronics systems
  • Motor control drives
  • Industrial power conversion

Procurement Notes

Verify the specific suffix DR2G corresponds to the SOIC-8 tape-and-reel packaging configuration required for your assembly line. Confirm that the AEC-Q100 qualification status meets your project's automotive reliability requirements. Ensure the 18 V maximum supply voltage aligns with your system's gate drive power rail specifications before finalizing procurement.

Selection Notes

Select this component when a robust, automotive-grade solution is needed for high-voltage half-bridge topologies. The 4.3 A peak current ensures adequate drive strength for medium-power switches. Consider the SOIC-8 footprint for space-constrained designs requiring through-hole or surface-mount compatibility. Verify thermal management needs given the +125 °C maximum junction temperature rating.

Part Context

This part belongs to the NCP5183 series of high-voltage gate drivers from onsemi. It serves as a non-isolated driver solution for applications requiring independent high-side and low-side control without galvanic isolation barriers. The series targets industrial and automotive markets where reliability under harsh electrical conditions is critical.

Replacement Considerations

The NCV5183DR2G is a confirmed automotive-qualified substitute within the same family. Both parts share identical electrical specifications and pinouts. Verify package availability and lead times if transitioning between commercial (NCP) and automotive (NCV) grades.

FAQ

Does the NCP5183DR2G include internal dead-time generation?

No, the datasheet indicates no shutdown feature and does not list internal fixed dead time generation, unlike some other drivers in the portfolio such as the NCP5111.

What is the maximum supply voltage for this driver?

The maximum supply voltage is 18 V, with a minimum operating voltage of 9 V.

NCP5183DR2GNCP5183DR2G
$3.41
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