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NCP5359ADR2G
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Product Detailed Parameters
- Description：IC GATE DRVR HALF-BRIDGE 8SOIC
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Driven Configuration：Half-Bridge
- Channel Type：Synchronous
- Number of Drivers：2
- Gate Type：MOSFET (N-Channel)
- Voltage - Supply：10V ~ 13.2V
- Logic Voltage - VIL, VIH：1V, 2V
- Current - Peak Output (Source, Sink)：-
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：16ns, 15ns
- Operating Temperature：0°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：30 V
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Overview
The NCP5359ADR2G is a dual MOSFET gate driver IC designed for notebook power systems. It operates within a supply voltage range of 3 V to 20 V and delivers an output voltage of 35 V. The device features non-inverting logic compatible with CMOS and TTL inputs. It is housed in an 8-SOIC package suitable for surface mount installation. The component supports high-side and low-side configurations, providing robust driving capabilities for power management applications.
Feature Summary
- Dual channel configuration for simultaneous high-side and low-side control
- Non-inverting logic interface compatible with standard digital signals
- Optimized design specifically for notebook power system architectures
Applications
- Notebook power management circuits
- Dual MOSFET gate driving stages
- Portable electronic power supplies
Procurement Notes
Verify the specific suffix ADR2G against the manufacturer's current datasheet to confirm pinout and electrical specifications. Ensure compatibility with the target PCB footprint and thermal requirements. Cross-reference the RoHS status and lifecycle status directly with onsemi documentation before finalizing procurement decisions.
Selection Notes
Select this component when designing power stages for portable computing devices requiring integrated dual-channel drive. Evaluate the 35 V output capability against the gate threshold requirements of the connected MOSFETs. Confirm that the 8-SOIC package dimensions fit the mechanical constraints of the target enclosure and board layout.
Part Context
This part belongs to the NCP5359 series of gate drivers from onsemi. It is categorized under PMIC - Power Management ICs and specifically serves as a MOSFET Gate Driver. The device is manufactured using Silicon technology and is intended for use in compact power electronics where space efficiency and dual-channel integration are critical.
FAQ
Is the NCP5359ADR2G available in a through-hole package?
No, the NCP5359ADR2G is exclusively available in an 8-SOIC surface-mount package.
Does the NCP5359ADR2G include internal shutdown functionality?
The provided specifications do not explicitly list an internal shutdown pin; verify the detailed schematic in the official datasheet for control input definitions.
