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Product Detailed Parameters
- Description:SINGLE CHANNEL INTEGRATED DRIVER
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Cut Tape (CT)
- Switch Type:General Purpose
- Number of Outputs:1
- Ratio - Input:Output:1:01
- Output Configuration:Low Side
- Output Type:N-Channel
- Interface:On/Off
- Voltage - Load:650V
- Voltage - Supply (Vcc/Vdd):9V ~ Not Required
- Current - Output (Max):30A
- Rds On (Typ):50mOhm
- Input Type:Non-Inverting
- Features:Slew Rate Controlled
- Fault Protection:UVLO
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:26-TQFN (8x8)
- Package / Case:26-TQFN Exposed Pad
- Grade:-
- Qualification:-
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Overview
The NCP58921MNTWG is a 650V integrated GaN FET featuring an embedded gate driver. It combines an enhancement-mode GaN transistor with a dedicated driver in a single package to optimize switching performance and reduce parasitic inductance. The device supports high-frequency operation suitable for power conversion applications, offering low on-resistance and fast switching characteristics. Integrated protection features enhance system reliability while simplifying the design of compact, high-efficiency power supplies.
Feature Summary
- Integrated enhancement-mode GaN FET with embedded gate driver
- Optimized for high-frequency power conversion efficiency
- Reduced parasitic inductance through monolithic packaging
Applications
- High-density AC/DC adapters
- Server and data center power supplies
- Industrial motor drives
Procurement Notes
Verify the specific suffix MNTWG against the manufacturer's official datasheet to confirm the exact tape and reel quantity and packaging configuration. Ensure the component meets the required automotive or industrial qualification standards if applicable to the target application environment.
Selection Notes
Select this component for designs requiring high power density and simplified gate drive circuitry. The integrated nature reduces external component count and layout complexity. Evaluate thermal management requirements based on the expected switching frequency and load conditions to ensure reliable operation within the specified temperature range.
Part Context
This part belongs to onsemi's iGaN family, which integrates e-mode GaN transistors with gate drivers. This integration addresses the complexity of driving discrete GaN devices by providing optimized drive strength and protection, enabling higher switching frequencies and improved system efficiency compared to traditional silicon MOSFETs.
Replacement Considerations
Direct replacements must be verified against the official cross-reference list. Substitutes should match the 650V rating, current capabilities, and package dimensions. Ensure any alternative device offers comparable switching speeds and integrated driver functionality to maintain system performance.
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