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Product Detailed Parameters
- Description:SINGLE CHANNEL INTEGRATED DRIVER
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Cut Tape (CT)
- Switch Type:General Purpose
- Number of Outputs:1
- Ratio - Input:Output:1:01
- Output Configuration:Low Side
- Output Type:N-Channel
- Interface:Logic
- Voltage - Load:650V
- Voltage - Supply (Vcc/Vdd):-
- Current - Output (Max):18A
- Rds On (Typ):78mOhm
- Input Type:Non-Inverting
- Features:-
- Fault Protection:UVLO
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:26-TQFN (8x8)
- Package / Case:26-TQFN Exposed Pad
- Grade:-
- Qualification:-
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Overview
The NCP58922MNTWG is an enhanced mode Gallium Nitride (GaN) power switch manufactured by onsemi. It integrates a single N-channel GaN transistor with a dedicated gate driver in a compact 26-TQFN package measuring 8x8 mm. The device supports a continuous current of 18A and operates with TTL logic compatibility at a supply current of 1.7 mA. Designed for high-efficiency power distribution, it combines fast switching capabilities with integrated protection features within a small form factor suitable for dense PCB layouts.
Feature Summary
- Integrates enhanced mode GaN FET with dedicated gate driver
- Supports 18A continuous load current
- Compatible with TTL logic input levels
- Compact 26-pin TQFN surface-mount package
Applications
- Power distribution switches
- Load management circuits
- High-density power conversion systems
Procurement Notes
Verify the specific suffix 'MNTW' to confirm the tape and reel packaging configuration and temperature rating. Ensure the ordering part number matches the exact pinout and thermal pad requirements for your PCB footprint. Cross-reference the latest datasheet revision for any updates to absolute maximum ratings or recommended operating conditions before finalizing procurement specifications.
Selection Notes
Select this component when a monolithic solution combining GaN efficiency with integrated drive control is required. It is suitable for applications demanding high current density in limited space. Consider the 18A current rating against peak load requirements and ensure thermal management strategies align with the TQFN package's heat dissipation characteristics for reliable long-term operation.
Part Context
This device belongs to onsemi's portfolio of advanced power management solutions leveraging GaN technology. It addresses the industry trend toward miniaturization and higher efficiency in power electronics. The integration of the driver eliminates external component count, reducing design complexity compared to discrete MOSFET or GaN setups requiring separate driver ICs.
Replacement Considerations
Consult official onsemi documentation for direct cross-references. Verify pin-to-pin compatibility and electrical parameter equivalence if substituting with other GaN power switches from different manufacturers.
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