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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SOIC
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Synchronous
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4.5V ~ 13.2V
- Logic Voltage - VIL, VIH:1V, 2V
- Current - Peak Output (Source, Sink):-
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):16ns, 11ns
- Operating Temperature:0°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):35 V
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Overview
The NCP5901BDR2G is a half-bridge MOSFET gate driver designed for VR12 applications. It operates within a supply voltage range of 4.5 V to 13.2 V and supports dual outputs with two drivers. The device features a rise time of 16 ns and a fall time of 11 ns, with maximum turn-on and turn-off delay times of 30 ns each. It functions at temperatures between -10°C and +125°C, draws 12.2 mA in operating current, and delivers an output voltage of 35 V. Packaged in SOIC-8.
Feature Summary
- Integrated half-bridge topology optimized for VR12 specifications
- Dual independent driver channels for high-side and low-side control
- Fast switching performance with nanosecond-level propagation delays
Applications
- VR12 compliant power delivery systems
- MOSFET gate driving in voltage regulator modules
- High-frequency DC-DC converter topologies
Procurement Notes
Verify the specific suffix DR2G against official onsemi documentation to confirm package type and reel specifications. Ensure compatibility with VR12 interface requirements before integration. Cross-reference the datasheet for thermal management needs given the SOIC-8 form factor and operational temperature range. Confirm RoHS compliance status through the manufacturer's latest product change notices.
Selection Notes
Select this component when a dedicated half-bridge driver for VR12 architectures is required. The SOIC-8 package suits surface-mount assembly processes. Evaluate the 12.2 mA quiescent current against system power budgets. The 35 V output capability ensures robust drive levels for associated MOSFETs within the specified supply voltage limits.
Part Context
This part belongs to the NCP5901B series from onsemi, categorized under PMIC and MOSFET Gate Drivers. It serves as a specialized interface between control logic and power switches in regulated power stages. The series focuses on meeting specific processor voltage regulator standards.
Replacement Considerations
NCP5901BMNTBG shares identical electrical characteristics but utilizes a DFN-8 package instead of SOIC-8. Verify footprint compatibility and thermal dissipation differences before substitution.
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