— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SOIC
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Synchronous
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4.5V ~ 13.2V
- Logic Voltage - VIL, VIH:1V, 2V
- Current - Peak Output (Source, Sink):-
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):16ns, 11ns
- Operating Temperature:0°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):35 V
Download product information
Overview
The NCP5901BDR2G is a half-bridge MOSFET gate driver designed for VR12 applications. It operates within a supply voltage range of 4.5 V to 13.2 V and supports outputs up to 35 V. The device features two drivers with rise and fall times of 16 ns and 11 ns, respectively. Propagation delays are capped at 30 ns for both turn-on and turn-off states. It functions between -10°C and +125°C, draws 12.2 mA in quiescent current, and is housed in an SOIC-8 package.
Feature Summary
- Integrated half-bridge topology optimized for VR12 compliance
- High-speed switching capabilities with low propagation delay
- Robust operating temperature range for demanding environments
Applications
- VR12 compliant power delivery systems
- MOSFET gate driving in synchronous buck converters
- Server and workstation power management modules
Procurement Notes
Verify the exact part number suffix against official onsemi documentation, as variations such as EMNTBG or MNTBG may indicate different packaging or thermal characteristics. Confirm RoHS compliance status through the manufacturer's latest datasheet. Ensure the ordering information matches the specific DR2G designation to avoid substitution errors during procurement.
Selection Notes
Select this component when designing VR12-compliant power stages requiring precise timing control. The SOIC-8 package suits surface-mount assembly processes. Evaluate the 35 V output capability against the target MOSFET gate requirements. Consider the 12.2 mA supply current for efficiency calculations in low-power standby modes.
Part Context
This device belongs to the NCP5901B series of gate drivers from onsemi. It is categorized under PMIC and MOSFET Gate Drivers. The series includes variants like NCP5901EMNTBG, which shares similar electrical characteristics but differs in package type. The product line targets high-efficiency power conversion applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing designs before considering alternative components.
ChipApex | Global Electronic Components Supplier








