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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8WDFN
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4.5V ~ 20V
- Logic Voltage - VIL, VIH:1.2V, 1.8V
- Current - Peak Output (Source, Sink):5A, 5A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):8ns, 8ns
- Operating Temperature:-40°C ~ 140°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-WDFN Exposed Pad
- Supplier Device Package:8-WDFN (3x3)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The NCP81071BMNTXG is a dual low-side MOSFET gate driver manufactured by onsemi. It operates within a supply voltage range of 4.5 V to 20 V and delivers a peak output current of 5 A. The device features rise and fall times of 8 ns each, ensuring rapid switching performance. It is housed in an 8-WDFN (3x3 mm) surface-mount package with an exposed pad for thermal management. The component supports an operating temperature range from -40 °C to +140 °C junction temperature.
Feature Summary
- Provides high peak drive current of 5 A to mitigate Miller effect during switching transitions
- Features independent enable inputs for precise control over driver operation
- Maintains TTL/CMOS logic compatibility regardless of supply voltage levels
Applications
- Isolated phase-shifted full bridge DC-DC converters
- Synchronous rectification circuits in power supplies
- Telecommunications and server power distribution systems
Procurement Notes
Verify the specific suffix BMNTXG against the manufacturer datasheet to confirm the WDFN-8 package variant. Ensure the ordering part number matches the required pinout and thermal pad configuration. Cross-reference RoHS compliance status with the latest product change notices. Confirm availability through authorized distributors as lead times may vary based on production cycles.
Selection Notes
Select this component when a compact dual low-side driver with high current capability is required. The WDFN-8 package offers a small footprint suitable for dense PCB layouts. Consider the 5 A drive strength for driving larger MOSFETs efficiently. Verify that the application voltage remains within the 4.5 V to 20 V operational window.
Part Context
This device belongs to the NCP81071 series of high-speed MOSFET gate drivers. The series includes variants with different packaging options such as SOIC-8, MSOP-8, and other DFN configurations. All variants share similar electrical characteristics but differ in physical dimensions and thermal properties. The series is designed for general-purpose power management applications requiring reliable gate driving.
Replacement Considerations
Direct replacements include NCP81071AMNTXG and NCP81071CMNTXG, which share identical electrical specifications. Substitution requires verification of the package type, as these alternatives may use different footprints. Ensure the replacement part maintains the same WDFN-8 form factor if board space is constrained.
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