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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8WDFN
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4.5V ~ 20V
- Logic Voltage - VIL, VIH:1.2V, 1.8V
- Current - Peak Output (Source, Sink):5A, 5A
- Input Type:Inverting, Non-Inverting
- Rise / Fall Time (Typ):8ns, 8ns
- Operating Temperature:-40°C ~ 140°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-WDFN Exposed Pad
- Supplier Device Package:8-WDFN (3x3)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The NCP81071CMNTXG is a dual low-side MOSFET gate driver manufactured by onsemi. It features two independent outputs with peak source and sink currents of 5 A each. The device operates within a supply voltage range of 4.5 V to 20 V. Typical rise and fall times are 8 ns. It supports logic input voltages of 1.2 V and 1.8 V. The component is housed in an 8-WDFN (3x3) package with a bare pad, designed for surface mount installation. The junction temperature operating range extends from -40°C to +140°C.
Feature Summary
- Dual independent low-side channel configuration for driving N-channel MOSFETs
- High peak output current capability of 5 A for both sourcing and sinking
- Fast switching performance with typical 8 ns rise and fall times
- Compatible with low-voltage logic inputs including 1.2 V and 1.8 V levels
Applications
- Power management modules requiring efficient low-side switching
- Server and data center power distribution architectures
- Industrial motor control systems utilizing MOSFET bridges
- Consumer electronics power stages needing compact footprint solutions
Procurement Notes
Verify authenticity through authorized onsemi distributors or certified partners. Request official RoHS compliance documentation and material declarations prior to order confirmation. Confirm the specific suffix matches the required WDFN-8 package variant. Check for recent Product Change Notices regarding assembly or sourcing updates. Ensure storage conditions meet moisture sensitivity level requirements before reflow soldering.
Selection Notes
Select this component when a compact dual low-side driver with high current capability is required. The 8-WDFN package offers a small footprint suitable for space-constrained designs. Verify that the application logic signals align with the supported 1.2 V and 1.8 V input thresholds. Ensure the power supply voltage remains within the 4.5 V to 20 V operational range. Consider thermal dissipation requirements given the bare pad design and high current ratings.
Part Context
This part belongs to the NCP81071 series of gate drivers from onsemi. The series includes variants with different packages such as AMNTXG (WFDN-8), AZR2G (MSOP-8), and CDR2G (SOIC-8). All variants share similar electrical characteristics including 5 A output current and 8 ns switching speeds. The CMNTXG specifically utilizes the 8-WDFN package format for dense PCB layouts.
Replacement Considerations
Direct pin-compatible substitutes include NCP81071AMNTXG, NCP81071AZR2G, and NCP81071CDR2G. Note that these alternatives may differ in package type despite identical electrical specifications. Verify package dimensions and thermal pad requirements before substitution. Check datasheet revisions to ensure functional equivalence across different manufacturing batches.
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