NCP81075DR2G

Overview

The NCP81075DR2G is a high-performance dual MOSFET gate driver from onsemi, designed to drive both high-side and low-side power devices. It operates within a supply voltage range of 8.5 V to 20 V and delivers an output current of 4 A. The device features propagation delays with a maximum of 50 ns, rise times of 8 ns, and fall times of 7 ns. It functions reliably across an extended temperature range from -40°C to +140°C. Packaged in an SOIC-8 surface-mount format, it supports TTL logic inputs and consumes 7.3 mA of quiescent current without a shutdown function.

Feature Summary

• Dual-channel architecture optimized for simultaneous high-side and low-side MOSFET control
• High peak output current capability of 4 A for rapid switching transitions
• Extended thermal stability supporting operation up to 140°C junction temperature

Applications

• Synchronous buck converter topologies requiring integrated high and low side driving
• DC-DC converter modules utilizing external power MOSFETs
• Industrial motor control circuits driving half-bridge configurations

Procurement Notes

Verify the specific suffix DR2G against the manufacturer's latest datasheet to confirm package type and tape/reel specifications. Ensure compatibility with system voltage limits and thermal requirements before integration. Cross-reference ordering information directly with onsemi authorized distributors to validate authenticity and current production status.

Selection Notes

Select this component when a single IC solution is required for driving complementary high-side and low-side MOSFETs in power conversion stages. It is suitable for applications demanding moderate switching speeds and robust performance over wide temperature ranges. Consider alternative parts if higher output currents or lower propagation delays are strictly necessary.

Part Context

This part belongs to the NCP81075 series of dual MOSFET gate drivers manufactured by onsemi. It falls under the broader category of PMIC gate drivers intended for efficient power management. The series provides a compact solution for replacing discrete driver components in space-constrained power electronics designs.

Replacement Considerations

Direct substitutes include other dual high/low-side gate drivers with similar 4A output and SOIC-8 packaging. Verify pinout compatibility and electrical parameters such as supply voltage range and propagation delay before substitution.