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Product Detailed Parameters
- Description:IC GATE DRVR HI/LOW SIDE 8DFN
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:High-Side or Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:8.5V ~ 20V
- Logic Voltage - VIL, VIH:0.8V, 2.7V
- Current - Peak Output (Source, Sink):4A, 4A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):8ns, 7ns
- Operating Temperature:-40°C ~ 140°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-VDFN Exposed Pad
- Supplier Device Package:8-DFN (4x4)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):200 V
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Overview
The NCP81075MNTXG is a high-performance dual MOSFET gate driver manufactured by onsemi. It features two independent output channels designed to drive both high-side and low-side power switches in synchronous rectification applications. The device operates within a supply voltage range of 8.5 V to 20 V and delivers peak output currents of 4 A for both sourcing and sinking. Key electrical parameters include rise and fall times of 8 ns and 7 ns respectively, with a maximum propagation delay of 50 ns. It supports TTL logic inputs and functions reliably across an operating temperature range from -40°C to +140°C.
Feature Summary
- Dual-channel architecture supporting simultaneous high-side and low-side MOSFET control
- High-speed switching capability with nanosecond-level rise and fall times
- Robust thermal performance enabling operation up to 140°C junction temperature
- TTL-compatible input logic for direct interfacing with standard controllers
Applications
- Synchronous buck converter topologies requiring precise gate control
- Point-of-load (POL) power supply modules
- Server and workstation VRM designs
- Industrial motor drive systems
Procurement Notes
Verify the specific suffix MNTXG against the manufacturer datasheet to confirm package type and tape-and-reel specifications. Ensure that the required output current and voltage ratings align with the target MOSFET characteristics. Confirm availability through authorized distributors as lead times may vary based on production cycles. Cross-reference the RoHS compliance status if environmental regulations are a constraint for the final assembly.
Selection Notes
Select this component when a dual-channel driver with high speed and moderate current capability is required for non-isolated applications. Compare against alternatives like the NCP81071 series if only low-side driving is needed, or the NCP81075DR2G if a SOIC-8 package is preferred over the WFDN-8 form factor. Evaluate the 4 A output current against the total gate charge of the intended power switches to ensure adequate switching performance without excessive heat generation.
Part Context
This part belongs to the NCP81075 family of high-performance gate drivers from onsemi. It is distinct from the NCP81071 series, which is configured exclusively for low-side driving. The NCP81075 variant specifically addresses applications requiring both high-side and low-side control within a single compact package, making it suitable for complex power stages where space efficiency and switching speed are critical design factors.
Replacement Considerations
The NCP81075DR2G serves as a pin-compatible alternative offering identical electrical specifications but utilizes a SOIC-8 package instead of the WFDN-8 footprint. Designers must verify PCB layout compatibility before substitution. No other direct functional equivalents are documented in the provided reference data.
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