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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8DFN
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Synchronous
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4.5V ~ 5.5V
- Logic Voltage - VIL, VIH:0.7V, 3.4V
- Current - Peak Output (Source, Sink):-
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):16ns, 11ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-VFDFN Exposed Pad
- Supplier Device Package:8-DFN (2x2)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):35 V
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Overview
The NCP81253MNTBG is a high-side and low-side MOSFET gate driver manufactured by onsemi. It operates within a supply voltage range of 4.5 V to 5.5 V and features two independent drivers with two outputs. The device supports surface mount installation in a QFN package. Key timing parameters include a maximum rise time of 16 ns, a fall time of 11 ns, a maximum turn-on delay of 15 ns (high-side) and 8 ns (low-side), and a maximum turn-off delay of 18 ns (high-side) and 15 ns (low-side). It functions reliably across an operating temperature range from -40°C to +100°C.
Feature Summary
- Provides dual-channel high-side and low-side driving capability for synchronous buck applications
- Features fast switching performance with nanosecond-scale rise and fall times
- Includes a dedicated shutdown pin for power management control
Applications
- Synchronous buck converter circuits
- Point-of-load (POL) power regulation modules
- General-purpose high-speed MOSFET driving in power management systems
Procurement Notes
Verify the specific suffix MNTBG against the manufacturer's current datasheet to confirm package type and tape/reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Confirm that the operating temperature range aligns with your system's thermal design constraints before finalizing procurement.
Selection Notes
Select this component when a compact, dual-channel gate driver is required for synchronous rectification. The 4.5 V to 5.5 V supply range suits standard logic-level control interfaces. Consider the 16 ns rise time and 11 ns fall time for high-frequency switching applications where minimizing transition losses is critical. Verify compatibility with the intended MOSFET gate charge requirements.
Part Context
This part belongs to the NCP81253 series of gate drivers from onsemi. It is categorized under PMIC - Power Management ICs and specifically MOSFET Gate Drivers. The device utilizes Silicon technology and is designed for surface-mount assembly. It serves as a specialized interface between low-power control logic and high-current power switches.
Replacement Considerations
Consult official substitution lists for compatible gate drivers within the same series or family. Verify pinout compatibility and electrical parameter equivalence before replacing. Generic alternatives may not match the specific delay times or supply voltage ranges.
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