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NCP81258HMNTBG
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Product Detailed Parameters
- Description：MOSFET DRIVER, VR12 COMPATIBLE,
- Series：-
- Mfr：onsemi
- Package：Bulk
- Driven Configuration：High-Side and Low-Side
- Channel Type：Synchronous
- Number of Drivers：2
- Gate Type：MOSFET (N-Channel)
- Voltage - Supply：4.5V ~ 13.2V
- Logic Voltage - VIL, VIH：0.7V, 3.4 V
- Current - Peak Output (Source, Sink)：-
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：16ns, 11ns
- Operating Temperature：-10°C ~ 125°C (TA)
- Mounting Type：Surface Mount
- Package / Case：8-VFDFN Exposed Pad
- Supplier Device Package：8-DFN (2x2)
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
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Overview
The NCP81258HMNTBG is a high-side and low-side gate driver IC designed for VR12 MOSFET applications. It operates within a supply voltage range of 4.5 V to 13.2 V and features an internal bootstrap diode with undervoltage lockout protection. The device provides non-inverting outputs with a maximum propagation delay of 25 ns, rise time of 16 ns, and fall time of 11 ns. It functions reliably across a temperature range of -40°C to +150°C and is housed in an 8-lead DFN (2x2 mm) surface-mount package.
Feature Summary
- Integrated high-side and low-side drivers optimized for VR12 specifications
- Built-in internal bootstrap diode eliminates external component requirements
- Undervoltage lockout mechanism ensures safe switching operations
Applications
- VR12 compliant CPU power delivery systems
- Synchronous buck converter gate driving
- High-density server and workstation power stages
Procurement Notes
Verify the specific suffix 'H' against the manufacturer's official documentation to confirm pinout or electrical parameter variations compared to standard variants. Ensure the DFN-8 package dimensions match your PCB footprint design. Confirm RoHS compliance status through the latest datasheet revision notes before finalizing procurement orders.
Selection Notes
Select this component when VR12 interface compatibility is required for synchronous buck applications. The integrated bootstrap diode simplifies board layout by reducing external parts count. Verify that the operating supply voltage remains within the 4.5 V to 13.2 V range and that the thermal performance supports the specified junction temperature limits in your target enclosure.
Part Context
This part belongs to onsemi's dedicated MOSFET gate driver portfolio, specifically engineered for voltage regulator controller interfaces. It complements digital and analog VR controllers by providing robust drive signals for external power MOSFETs. The series focuses on high-speed switching capabilities and integration to support modern processor power delivery standards.
Replacement Considerations
Check for direct cross-reference part numbers from onsemi or other manufacturers offering identical VR12-compatible gate driver functionality. Ensure replacement devices maintain the same DFN-8 package outline and pin configuration to avoid PCB redesign efforts.
