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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8DFN
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Synchronous
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4.5V ~ 13.2V
- Logic Voltage - VIL, VIH:0.7V, 3.4V
- Current - Peak Output (Source, Sink):-
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):16ns, 11ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-VFDFN Exposed Pad
- Supplier Device Package:8-DFN (2x2)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):35 V
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Overview
The NCP81258MNTBG is a dual-channel MOSFET gate driver designed for VR12 compliant applications. It integrates high-side and low-side drivers in an 8-lead DFN package. The device operates with a supply voltage range of 4.5 V to 13.2 V. Key timing parameters include a maximum propagation delay of 25 ns, a rise time of 16 ns, and a fall time of 11 ns. It functions within a temperature range of -40°C to +150°C junction temperature. The quiescent current is specified at 12.2 mA. Features include an internal bootstrap diode and undervoltage lockout protection.
Feature Summary
- Integrates high-side and low-side gate drivers for single-phase power delivery control
- Includes an internal bootstrap diode to simplify external component count
- Provides undervoltage lockout protection for reliable operation under low supply conditions
Applications
- VR12 compliant CPU voltage regulation modules
- Single-phase synchronous buck converters
- Server and workstation power supplies
Procurement Notes
Verify the complete part number including suffixes against official onsemi documentation to ensure correct packaging and temperature grade. Confirm that the DFN-8 package outline matches your PCB footprint requirements. Check for any specific RoHS compliance details or material declarations required by your procurement standards before finalizing orders.
Selection Notes
Select this component when designing for VR12 specifications requiring integrated high and low-side driving capabilities. Ensure the input signal levels are compatible with the logic thresholds. Verify that the thermal performance of the DFN-8 package meets the system's heat dissipation needs given the 150°C maximum junction rating. Consider the 12.2 mA operating current for overall system efficiency calculations.
Part Context
This device belongs to the NCP81258 series of gate drivers from onsemi. It is categorized under PMIC and MOSFET Gate Drivers. The series is targeted at high-performance computing applications requiring precise voltage regulation. The DFN-8 package offers a compact solution for space-constrained designs.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains VR12 compatibility and similar electrical characteristics such as propagation delay and operating voltage range.
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