NCV33152DR2G

$2.02

Description：IC GATE DRVR LOW-SIDE 8SOIC
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b694100d1beb Category: Gate Drivers Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IC GATE DRVR LOW-SIDE 8SOIC
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Driven Configuration：Low-Side
Channel Type：Independent
Number of Drivers：2
Gate Type：MOSFET (N-Channel)
Voltage - Supply：6.1V ~ 18V
Logic Voltage - VIL, VIH：0.8V, 2.6V
Current - Peak Output (Source, Sink)：1.5A, 1.5A
Input Type：Non-Inverting
Rise / Fall Time (Typ)：36ns, 32ns
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-
High Side Voltage - Max (Bootstrap)：-

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NCV33152DR2G

Overview

The NCV33152DR2G is a dual non-inverting high-speed MOSFET gate driver manufactured by onsemi. It features two independent channels with 1.5 A peak source and sink current capabilities. The device operates within a supply voltage range of 6.1 V to 18 V and supports CMOS and LSTTL logic inputs. Typical rise and fall times are 15 ns with a 1000 pF load. It includes undervoltage lockout with hysteresis and is qualified under AEC-Q100 standards for automotive applications, operating from -40°C to +85°C.

Feature Summary

Dual independent channels providing high-current drive for power MOSFETs
CMOS and LSTTL logic compatibility with input hysteresis
Undervoltage lockout mechanism prevents erratic operation at low voltages
Automotive qualification ensuring site and change control compliance

Applications

Switching power supplies
DC-to-DC converters
Motor controllers
Capacitor charge pump voltage doublers/inverters

Procurement Notes

Verify the specific suffix matches the required automotive grade and packaging configuration. Confirm RoHS compliance status and material declarations against the latest manufacturer documentation. Ensure the ordering part number aligns with the desired tape and reel specifications for surface mount assembly processes.

Selection Notes

Select this component when high-speed switching with significant capacitive loads is required. The dual channel design simplifies half-bridge or full-bridge configurations. Consider the 1.5 A output capability for driving multiple parallel MOSFETs efficiently. Verify logic level compatibility with the controlling microcontroller or PWM IC.

Part Context

This device belongs to the NCV33152 series, designed for robust performance in demanding environments. The NCV prefix indicates automotive-grade manufacturing with strict site and change controls. It serves as a direct interface between low-power digital logic and high-power switching elements, enhancing system efficiency and reliability.