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NCV5106ADR2G
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Product Detailed Parameters
- Description：IC GATE DRVR HALF-BRIDGE 8SOIC
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration：Half-Bridge
- Channel Type：Synchronous
- Number of Drivers：2
- Gate Type：IGBT, MOSFET (N-Channel)
- Voltage - Supply：10V ~ 20V
- Logic Voltage - VIL, VIH：0.8V, 2.3V
- Current - Peak Output (Source, Sink)：250mA, 500mA
- Input Type：Inverting, Non-Inverting
- Rise / Fall Time (Typ)：85ns, 35ns
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：600 V
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Overview
The NCV5106ADR2G is a high-voltage gate driver IC from onsemi, designed for direct driving of two N-channel power MOSFETs or IGBTs. It supports half-bridge configurations (Version B) or independent high-side and low-side setups (Version A). The device utilizes bootstrap technology for high-side switching and features two independent inputs. It operates within a voltage range up to 600V and offers dV/dt immunity of ±50V/nsec to maintain stability during rapid voltage transitions.
Feature Summary
- Directly drives two N-channel power MOSFETs or IGBTs in half-bridge or independent high/low-side configurations
- Utilizes bootstrap technology to ensure correct high-side power switch driving
- Features two independent inputs for flexible control logic
- Provides high dV/dt immunity to maintain performance during rapid voltage changes
Applications
- Industrial power supplies
- Motor drive systems
- High-voltage switching applications
Procurement Notes
Verify the specific suffix 'ADR2G' against official datasheets to confirm package type and tape/reel specifications. Ensure compatibility with system voltage requirements up to 600V. Confirm that the selected variant matches the required configuration (half-bridge vs. independent high/low side) as defined by the manufacturer's documentation.
Selection Notes
Select this component when a high-voltage gate driver capable of handling 600V is required. Consider the NCV5106A variant if independent high-side and low-side operation is needed, or the NCV5106B variant for dedicated half-bridge applications. Evaluate the need for bootstrap driving capabilities and dV/dt immunity in high-speed switching environments.
Part Context
The NCV5106 series includes variants such as NCV5106A and NCV5106B, which differ in internal configuration for specific topologies. The NCP5106 is a non-automotive grade counterpart. The NCV prefix indicates automotive qualification, aligning with onsemi's broader portfolio of qualified power management and gate driver solutions.
Replacement Considerations
NCV5106A: Suitable for independent high-side and low-side configurations. NCV5106B: Designed specifically for half-bridge configurations. NCP5106: Non-automotive grade alternative.
