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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 10DFNW
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:8V ~ 19V
- Logic Voltage - VIL, VIH:0.8V, 2.3V
- Current - Peak Output (Source, Sink):2A, 3A
- Input Type:Inverting, Non-Inverting
- Rise / Fall Time (Typ):9ns, 7ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount, Wettable Flank
- Package / Case:10-VFDFN Exposed Pad
- Supplier Device Package:10-DFNW (3x3)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):150 V
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Overview
The NCV51513ABMNTWG is an automotive-grade half-bridge gate driver designed for high-frequency power applications. It features independent high-side and low-side drivers with a maximum supply voltage of 130 V. The device delivers peak output currents of 2.0 A sourcing and 3.0 A sinking. Key electrical parameters include a minimum operating supply voltage of 8 V, maximum of 19 V, and propagation delays up to 100 ns. Rise and fall times are specified at 9 ns and 7 ns respectively. It operates within a temperature range of -40 °C to +125 °C and utilizes a DFN-10 surface-mount package.
Feature Summary
- Integrated dead-time control and interlock logic to prevent shoot-through in half-bridge configurations.
- High dv/dt immunity and robust negative transient tolerance on bridge pins for reliable switching.
- Compatible with standard CMOS and TTL input logic levels for flexible interface integration.
Applications
- Automotive DC-DC converters
- Motor controllers
- Inverter systems
Procurement Notes
Verify the specific suffix 'A' and 'B' designations against the official datasheet to confirm the exact timing characteristics required for your application. Ensure the DFN-10 thermal pad soldering process meets automotive reliability standards. Confirm RoHS compliance status through the manufacturer's current documentation before finalizing procurement.
Selection Notes
Select this component when designing automotive power stages requiring integrated protection against simultaneous conduction. The built-in interlock mechanism simplifies layout compared to discrete solutions. Evaluate the 130 V rating against your bus voltage requirements. Consider the thermal performance of the DFN-10 package relative to your expected power dissipation levels.
Part Context
This part belongs to the NCV51513 series of automotive gate drivers from onsemi. It is engineered specifically for harsh automotive environments, meeting AEC-Q100 qualification standards. The series provides optimized performance for high-efficiency power conversion, distinguishing it from general-purpose industrial drivers through its enhanced noise immunity and fault protection features.
Replacement Considerations
Consult the official cross-reference list for direct pin-compatible alternatives. Verify that any substitute maintains the same 130 V rating and output current capabilities. Ensure the replacement also supports the required DFN-10 footprint if board space is constrained.
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