NCV51705MNTWG

Overview

The NCV51705MNTWG is a single low-side gate driver designed for automotive SiC MOSFETs. It features a QFN-24 package (4 mm x 4 mm) with split output stages. The device operates within a supply voltage range of 10 V to 22 V, delivering a peak output current of 6 A. Switching performance includes rise and fall times of 8 ns. It supports an extended positive voltage rating up to 28 V max and incorporates a user-adjustable negative charge pump ranging from -3.3 V to -8 V. The component functions reliably across an operating temperature range of -40°C to 125°C.

Feature Summary

• High-speed switching with split output stages to minimize parasitic inductance
• Integrated adjustable negative charge pump for improved dv/dt immunity
• Fast desaturation function for overcurrent protection
• Accessible 5 V reference rail for powering secondary side isolation components

Applications

• Automotive high-performance inverters
• High-power motor drivers
• Totem pole PFCs
• Industrial motor drives
• High-power DC chargers

Procurement Notes

Verify the specific suffix 'MNTW' against the manufacturer's official datasheet to confirm the exact tape-and-reel packaging configuration and automotive qualification status. Ensure that the ordering part number matches the required RoHS compliance and lead-free specifications defined in the latest product release notes. Cross-reference the pinout diagram with the target PCB footprint to prevent orientation errors during assembly.

Selection Notes

Select this component when driving EliteSiC MOSFETs requiring high peak current and fast turn-off speeds. The integrated negative bias generator simplifies isolated gate drive designs by eliminating external negative supply requirements. Consider the QFN-24 package for applications demanding low thermal resistance and compact board space. Validate that the system's maximum voltage does not exceed the 28 V absolute maximum rating.

Part Context

This part belongs to the NCx51705 series of EliteSiC MOSFET gate drivers from onsemi. It is engineered specifically to optimize the performance of Silicon Carbide transistors by providing sufficient Vgs amplitude and minimizing switching losses. The series emphasizes reliability through robust dv/dt immunity and self-protection features suitable for harsh automotive environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.