NCV5701BDR2G

Overview

The NCV5701BDR2G is a standalone high-current IGBT gate driver manufactured by onsemi. It features an inverting input configuration and delivers a peak output current of 7.8 A. The device supports a supply voltage range up to 20 V and operates within a temperature range of -40°C to +125°C. Key electrical parameters include a maximum propagation delay of 70 ns, with rise and fall times specified at 9.2 ns and 7.9 ns respectively. It is housed in an SOIC-8 surface-mount package and includes DESAT protection with programmable delay functionality.

Feature Summary

• High-current output capability designed for robust IGBT switching applications
• Integrated DESAT protection mechanism with adjustable delay timing
• Inverting logic input configuration for standard control interface compatibility

Applications

• Industrial motor drive systems requiring high-power switching
• Inverter circuits in renewable energy conversion equipment
• High-frequency power supply topologies utilizing IGBT modules

Procurement Notes

Verify the specific suffix DR2G against official onsemi documentation to confirm packaging type and tape/reel specifications. Ensure the component meets AEC-Q100 automotive qualification requirements if intended for automotive-grade applications. Cross-reference the datasheet revision date to confirm design parameters align with current manufacturing standards.

Selection Notes

Select this component when a single-channel, high-current gate driver with integrated desaturation protection is required. The inverting input type suits control architectures where active-low signals are standard. Consider the SOIC-8 package constraints for thermal management and PCB layout space compared to larger isolation solutions.

Part Context

This part belongs to the NCV5701 series of high-current IGBT gate drivers from onsemi. The series is engineered for demanding power electronics applications, offering enhanced current sourcing and sinking capabilities compared to standard logic-level drivers. The NCV5701BDR2G variant specifically integrates protective features to safeguard IGBTs during short-circuit events.

Replacement Considerations

Direct substitutes may include other onsemi parts within the NCV5701 family, such as the NCV5701CDR2G or NCV5701BDR2G variants, provided pinout and electrical characteristics match. Verify functional equivalence regarding output current and protection features before substitution.