NCV5702DR2G

Overview

The NCV5702DR2G is a high-side and low-side IGBT gate driver IC manufactured by onsemi. It features a non-inverting input configuration and is housed in a 16-SOIC package. The device supports a supply voltage of up to 20V and delivers peak output currents of 7.8A (source) and 6.8A (sink). Typical rise and fall times are 9.2ns and 7.9ns, respectively. It operates within a temperature range of -40°C to +125°C and holds AEC-Q100 Grade 1 qualification for automotive applications.

Feature Summary

• Provides independent high-side and low-side drive outputs for IGBT control
• Features non-inverting logic input for direct signal interface
• Includes synchronous channel operation for precise timing control

Applications

• Motor control systems
• Solar inverters
• Uninterruptible power supplies

Procurement Notes

Verify the specific suffix DR2G corresponds to the SOIC-16 tape and reel packaging format. Confirm AEC-Q100 Grade 1 qualification status if automotive PPAP documentation is required. Ensure the non-inverting logic type matches the system design requirements compared to inverting variants.

Selection Notes

Select this component when a single-channel high/low side driver with non-inverting logic is needed. Compare peak source/sink current capabilities against load requirements. Verify that the 16-SOIC footprint fits the PCB layout constraints. Check operating temperature range suitability for the intended environment.

Part Context

This part belongs to the NCV5702 series of high-current IGBT gate drivers. It is designed for robust performance in high-power switching applications. The series emphasizes reliability and integration for industrial and automotive power electronics.

Replacement Considerations

NCV5700DR2G (Inverting logic, same package)

FAQ

What is the logic input type for the NCV5702DR2G?

The NCV5702DR2G features a non-inverting logic input configuration.

Is the NCV5702DR2G qualified for automotive applications?

Yes, it is AEC-Q100 Grade 1 qualified and PPAP capable.