NCV5703DDR2G

NCV5703DDR2G

$2.41
  • Description:IC GATE DRVR HIGH-SIDE 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:7789b55a6edf Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:IC GATE DRVR HIGH-SIDE 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:High-Side
  • Channel Type:Single
  • Number of Drivers:2
  • Gate Type:IGBT
  • Voltage - Supply:30V
  • Logic Voltage - VIL, VIH:0.75V, 4.3V
  • Current - Peak Output (Source, Sink):7A, 7.2A
  • Input Type:Inverting
  • Rise / Fall Time (Typ):9.2ns, 7.9ns
  • Operating Temperature:-40°C ~ 125°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

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NCV5703DDR2G

Overview

The NCV5703DDR2G is a high-side IGBT gate driver from onsemi, housed in an 8-SOIC package. It features an inverting configuration with a single output capable of sourcing and sinking 7 A. The device operates within a supply voltage range of 10 V to 30 V. Key timing parameters include a rise time of 9.2 ns and a fall time of 7.9 ns, with maximum turn-on and turn-off delays of 75 ns. It supports a power dissipation of 700 mW and functions across a temperature range of -40°C to +125°C.

Feature Summary

  • High-current output capability for driving IGBTs
  • Inverting logic configuration
  • Automotive qualification under AEC-Q101 standards

Applications

  • IGBT module switching control
  • Industrial motor drives
  • Power conversion systems

Procurement Notes

Verify the specific suffix 'DD' against official datasheets to confirm pinout and electrical characteristics differ from similar variants like 'BDR'. Ensure the component meets AEC-Q101 requirements if used in automotive contexts. Cross-reference the manufacturer part number directly with the original equipment manufacturer's documentation to avoid counterfeit or obsolete stock issues.

Selection Notes

Select this component when a high-side driver with 7 A peak current is required for IGBT applications. The inverting input simplifies control logic integration. Consider the SOIC-8 package constraints for thermal management, as the device dissipates up to 700 mW. Verify that the operating voltage range of 10 V to 30 V aligns with the target gate drive supply.

Part Context

This part belongs to the NCV5703 series of high-side gate drivers designed for robust industrial and automotive environments. It complements low-side drivers in half-bridge configurations, though it is sold as a standalone high-side unit. The series emphasizes reliability and fast switching speeds suitable for modern power electronics.

Replacement Considerations

The NCV5703BDR2G is a related variant within the same family but may have different electrical specifications or pinouts. Verify compatibility before substitution. No other direct public substitutes are confirmed in the provided data.

NCV5703DDR2GNCV5703DDR2G
$2.41
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