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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NCV7517BFTR2G is a low-side pre-driver from onsemi, designed to drive the gate of power MOSFETs. It features an H-bridge architecture with two independent channels for high-side and low-side control. The device operates within a supply voltage range of 4.5V to 18V. It provides peak output currents of up to 2A source and 4A sink. The component includes built-in protection mechanisms such as shoot-through prevention and thermal shutdown.
Verify the End-of-Life status directly with onsemi before finalizing designs, as this component is listed as obsolete. Confirm that the specific package type and pinout match your PCB layout requirements. Ensure that the operating temperature range meets your system's environmental specifications. Check for any available replacement part numbers if production continuity is required.
Select this component when a dedicated low-side driver with integrated H-bridge functionality is needed. Consider its current driving capabilities relative to the target MOSFET gate charge. Evaluate the need for internal protection features like shoot-through prevention in your specific application. Verify compatibility with the logic levels used in your control circuitry.
This part belongs to onsemi's family of gate drivers and power management ICs. It is specifically categorized under pre-drivers intended for controlling power switches. The product line focuses on providing robust solutions for industrial and automotive applications requiring reliable switching performance.
Check onsemi's official documentation for recommended replacements or cross-reference options due to the End-of-Life status. Verify pin-to-pin compatibility and electrical parameter equivalence if substituting with other manufacturers' parts.