NCV81071BZR2G

Overview

The NCV81071BZR2G is a dual low-side MOSFET gate driver manufactured by onsemi. It operates within a supply voltage range of 4.5 V to 20 V and delivers a peak output current of 5 A. The device features fast switching characteristics with rise and fall times of 8 ns. It is housed in an MSOP-8 surface-mount package and supports an operating temperature range from -40 °C to +140 °C.

Feature Summary

• Dual-channel configuration for independent low-side control
• High peak drive current capability for efficient MOSFET switching
• Fast propagation delays supporting high-frequency operation
• Extended thermal range suitable for demanding environments

Applications

• DC-DC converter circuits
• Motor control systems
• Power management modules

Procurement Notes

Verify the specific part number suffix against official documentation, as variations such as NCP81071BZR2G may exist within the same family. Confirm RoHS compliance status and ensure the MSOP-8 footprint matches the target PCB layout. Cross-reference datasheet electrical limits with system requirements before finalizing procurement decisions.

Selection Notes

Select this component when a compact dual low-side driver is required for space-constrained designs. The MSOP-8 package offers a smaller footprint compared to SOIC alternatives. Ensure the application voltage does not exceed the 20 V maximum rating and that the thermal design accommodates the specified junction temperature limits.

Part Context

This component belongs to the NCP81071 series of power management integrated circuits. It is categorized under MOSFET gate drivers within the broader PMIC portfolio. The device is designed to interface directly with logic-level inputs to drive external N-channel MOSFETs in various power conversion topologies.

Replacement Considerations

NCP81071BZR2G serves as a commercial grade equivalent. NCP81071AZR2G is available in the same package with potentially different qualification grades.