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Product Detailed Parameters
- Description:MOSFET N-CH 59V 2.6A SOT223
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR),Cut Tape (CT)
- Switch Type:General Purpose
- Number of Outputs:1
- Ratio - Input:Output:1:01
- Output Configuration:Low Side
- Output Type:N-Channel
- Interface:On/Off
- Voltage - Load:52V
- Voltage - Supply (Vcc/Vdd):Not Required
- Current - Output (Max):2.6A
- Rds On (Typ):95mOhm
- Input Type:Non-Inverting
- Features:-
- Fault Protection:Over Voltage
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-223 (TO-261)
- Package / Case:TO-261-4, TO-261AA
- Grade:Automotive
- Qualification:AEC-Q100
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Overview
The NCV8440ASTT3G is a 2.6A, 52V N-channel logic-level clamped MOSFET designed for automotive and industrial applications. It features an internal diode clamp between gate and source, providing 5kV HBM ESD protection. Key electrical parameters include a drain-source breakdown voltage of 52V, continuous drain current of 2.6A, and on-resistance of 180mΩ. The device operates within a temperature range of -55°C to +150°C, with a total power dissipation of 1.69W at 25°C ambient.
Feature Summary
- Integrated active over-voltage gate-to-drain clamp enhances stability under transient conditions.
- Internal series gate resistor optimizes switching performance and reduces noise.
- High energy handling capability supports inductive loads such as solenoids and motors.
Applications
- Solenoid driver circuits
- Lighting driver systems
- Small motor drive applications
Procurement Notes
Verify the specific suffix 'TT3G' against official datasheets to confirm tape-and-reel packaging specifications. Ensure compatibility with SOT-223-3 footprint requirements. Confirm RoHS compliance status through manufacturer documentation prior to integration into production lines.
Selection Notes
Select this component when high-side switching requires robust ESD immunity and overvoltage protection. The integrated clamp eliminates external components, reducing board space. Ideal for designs needing reliable operation in harsh automotive environments with significant inductive load transients.
Part Context
This part belongs to onsemi's protected power MOSFET family, specifically engineered for load switching. It combines standard MOSFET functionality with built-in protection mechanisms, distinguishing it from bare die or unprotected discrete transistors in similar packages.
Replacement Considerations
NCV8440ASTT1G serves as a direct alternative with identical electrical characteristics but differs in packaging configuration. Verify pinout and thermal performance alignment before substitution.
FAQ
What is the maximum human body model ESD rating?
The device provides 5000V ESD protection according to the Human Body Model specification.
Does the package include an internal gate resistor?
Yes, an internal series gate resistor is integrated to optimize switching speed and reduce electromagnetic interference.
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