NCV8440STCT1G

NCV8440STCT1G

  • Description:IC PWR MOSFET N-CH SOT223
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:782df16acea7 Category: Brand:

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Product Detailed Parameters

  • Description:IC PWR MOSFET N-CH SOT223
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Switch Type:General Purpose
  • Number of Outputs:1
  • Ratio - Input:Output:1:01
  • Output Configuration:-
  • Output Type:N-Channel
  • Interface:On/Off
  • Voltage - Load:52V
  • Voltage - Supply (Vcc/Vdd):Not Required
  • Current - Output (Max):2.6A
  • Rds On (Typ):95mOhm
  • Input Type:Non-Inverting
  • Features:-
  • Fault Protection:Over Voltage
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-223 (TO-261)
  • Package / Case:TO-261-4, TO-261AA
  • Grade:-
  • Qualification:-

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NCV8440STCT1G

Overview

The NCV8440STCT1G is a 2.6A, 52V N-channel logic-level clamped MOSFET designed for automotive and industrial applications. It features integrated ESD protection rated at 5000V (Human Model) and active overvoltage gate-to-drain clamping to enhance stability under transient conditions. The device includes an internal series gate resistor to optimize switching performance and handles high energy loads typical of inductive applications. Key electrical ratings include a maximum drain-source voltage of 52V to 59V, a continuous drain current of 2.6A, and a single-pulse drain current of 10A. It operates within a temperature range of -55°C to 150°C and dissipates up to 1.69W of power.

Feature Summary

  • Integrated diode clamp between gate and source provides robust ESD protection against electrostatic discharge events.
  • Active overvoltage clamping function protects the gate from excessive voltage stress during operation.
  • Internal series gate resistor is included to control switching speed and reduce electromagnetic interference.

Applications

  • Solenoid driver circuits
  • Lighting driver systems
  • Small motor drive interfaces

Procurement Notes

Verify the specific ordering suffix STCT1G to confirm package type and tape-and-reel specifications. Ensure the component meets AEC-Q100 qualification requirements if intended for automotive use. Cross-reference the datasheet revision date to confirm parameter consistency with your design specifications.

Selection Notes

Select this component when driving inductive loads such as solenoids or small motors requiring integrated protection. The built-in clamping features simplify circuit design by reducing external component count. Consider the thermal dissipation capabilities and package constraints when designing for high-current applications.

Part Context

This part belongs to onsemi's protected power MOSFET family, specifically engineered for harsh environments. It combines standard MOSFET functionality with integrated protection mechanisms, offering a compact solution for drivers where space and reliability are critical factors in automotive and industrial systems.

Replacement Considerations

Check for direct substitutes within the NCV8440 series that may offer different Rds(on) values or packaging options. Verify pin compatibility and electrical parameters before substituting with other manufacturers' protected MOSFETs.

FAQ

What is the ESD protection rating of the NCV8440STCT1G?

The device offers Human Model ESD protection up to 5000V due to the integrated diode clamp between the gate and source.

Does the NCV8440STCT1G require an external gate resistor?

No, an internal series gate resistor is integrated into the device to optimize switching performance without external components.

NCV8440STCT1GNCV8440STCT1G

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