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Product Detailed Parameters
- Description:IC PWR MOSFET N-CH SOT223
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR)
- Switch Type:General Purpose
- Number of Outputs:1
- Ratio - Input:Output:1:01
- Output Configuration:-
- Output Type:N-Channel
- Interface:On/Off
- Voltage - Load:52V
- Voltage - Supply (Vcc/Vdd):Not Required
- Current - Output (Max):2.6A
- Rds On (Typ):95mOhm
- Input Type:Non-Inverting
- Features:-
- Fault Protection:Over Voltage
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-223 (TO-261)
- Package / Case:TO-261-4, TO-261AA
- Grade:-
- Qualification:-
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Overview
The NCV8440STCT3G is a 2.6A, 52V N-channel logic-level clamped MOSFET designed for automotive and industrial applications. It integrates an internal diode clamp between the gate and source to provide ESD protection rated at 5000V according to the Human Model standard. The device features active overvoltage clamping from gate to drain, enhancing stability under transient conditions. Key electrical parameters include a maximum drain-source voltage of 52V, a continuous drain current of 2.6A, and a single-pulse drain current of 10A. It operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Integrated gate-to-source diode clamp provides robust ESD protection up to 5000V Human Model rating.
- Active overvoltage clamping function protects the gate-drain interface against transient voltage spikes.
- Internal series gate resistor optimizes switching performance and reduces electromagnetic interference.
- High energy handling capability allows reliable operation with inductive loads such as solenoids and motors.
Applications
- Solenoid driver circuits
- Lighting driver systems
- Small motor drive applications
Procurement Notes
Verify the specific suffix STCT3G corresponds to the SOT-227 package configuration when sourcing. Confirm that the NCV prefix requirement aligns with your automotive qualification standards. Ensure the datasheet version matches the manufacturing date code for accurate thermal resistance values. Cross-reference the ordering part number with official onsemi documentation to avoid confusion with non-clamped variants.
Selection Notes
Select this component when circuit design requires integrated ESD protection without external discrete components. The built-in clamping simplifies layout and reduces bill of materials cost for low-voltage power switching. Consider the 52V rating for systems operating near 24V nominal rails. Evaluate the thermal performance based on the expected duty cycle and ambient temperature constraints.
Part Context
This part belongs to the NCV8440 family of protected power MOSFETs from onsemi. The family includes variants like the NCV8440A, which may differ in specific electrical tolerances or packaging options. These devices are engineered specifically for harsh environments found in automotive and industrial sectors, offering higher reliability than standard MOSFETs lacking integrated protection structures.
Replacement Considerations
Direct substitutes must match the 52V rating, 2.6A current capacity, and integrated gate clamping feature. Verify pin compatibility and package dimensions if replacing in existing footprints. Non-clamped MOSFETs require additional external protection components to achieve equivalent functionality.
FAQ
What is the ESD protection rating of the NCV8440STCT3G?
The device offers ESD protection up to 5000V according to the Human Model standard due to the internal gate-to-source diode clamp.
Does the NCV8440STCT3G have an internal gate resistor?
Yes, it includes an internal series gate resistor to optimize switching characteristics and reduce noise.
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