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Product Detailed Parameters
- Description:MOSFET N-CH 59V 2.6A SOT223
- Series:-
- Mfr:onsemi
- Package:Tape & Reel (TR)
- Switch Type:General Purpose
- Number of Outputs:1
- Ratio - Input:Output:1:01
- Output Configuration:Low Side
- Output Type:N-Channel
- Interface:-
- Voltage - Load:52V ~ 59V
- Voltage - Supply (Vcc/Vdd):Not Required
- Current - Output (Max):2.6A
- Rds On (Typ):95mOhm
- Input Type:Non-Inverting
- Features:-
- Fault Protection:Over Voltage
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-223 (TO-261)
- Package / Case:TO-261-4, TO-261AA
- Grade:Automotive
- Qualification:AEC-Q100
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Overview
The NCV8440STT3G is a protected power MOSFET featuring an N-channel enhancement mode configuration in a SOT-223-3 package. It provides a continuous drain current of 2.6 A and a breakdown voltage of 52 V, with a maximum on-resistance of 180 mOhms. The device operates within a temperature range of -55°C to +150°C and dissipates up to 1.69 W. Key electrical parameters include a gate-source voltage of 15 V, a threshold voltage of 1.1 V, and a total gate charge of 4.5 nC.
Feature Summary
- Integrated diode clamp between gate and source for enhanced ESD protection
- Active overvoltage clamping from gate to drain to manage transient spikes
- Internal series gate resistor included to optimize switching performance
Applications
- Solenoid valve driving in automotive systems
- Lighting driver circuits
- Small motor drive applications
Procurement Notes
Verify the specific suffix STT3G corresponds to the SOT-223-3 tape and reel packaging format. Confirm that the component meets RoHS compliance standards and check for any specific AEC-Q101 qualification requirements if intended for automotive use. Ensure the ordering part number matches the exact pinout and thermal characteristics required for the target PCB layout.
Selection Notes
Select this component when a compact, single-channel solution is needed for low-current loads requiring robust gate protection. The integrated clamp reduces external component count compared to discrete designs. Consider the 180 mOhm on-resistance for efficiency calculations and verify that the 2.6 A continuous current rating aligns with the peak load demands of the application circuit.
Part Context
This device belongs to the NCV8440 family of protected power MOSFETs designed by onsemi. These components are engineered specifically for automotive and industrial environments where reliability under harsh electrical conditions is critical. The family offers scalable options for different current and voltage ratings while maintaining consistent protection features.
Replacement Considerations
Direct substitutes include the NCV8440ASTT1G, which shares similar protected MOSFET characteristics but may differ in packaging or specific parameter tolerances. Verify compatibility regarding thermal resistance and pin configuration before swapping.
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