NDS66PT5-20ET

Memory IC Overview

The NDS66PT5-20ET is a 64Mbit (4M x 16) SDRAM memory IC manufactured by Insignis Technology Corporation. It operates with a clock frequency of 200 MHz and features an access time of 4.5 ns. The device utilizes LVTTL interface technology and supports a supply voltage range of 3V to 3.6V. It is housed in a 54-TSOP II package, measuring 10x22 mm with a height of 1.2 mm. The component is designed for surface mount installation and supports parallel data transfer.

Memory IC Feature Summary

• Supports high-speed data processing with a 200 MHz clock frequency
• Utilizes LVTTL interface for standard logic compatibility
• Provides compact surface mount packaging for space-constrained designs

Memory IC Applications

• Embedded systems requiring volatile memory storage
• Consumer electronics utilizing SDRAM interfaces
• Industrial control units needing reliable data retention during operation

Memory IC Procurement Notes

Verify the specific suffix ET against official datasheets to confirm package type and speed grade. Ensure supply voltage requirements match system design constraints. Confirm RoHS compliance status for regulatory adherence. Check moisture sensitivity level handling procedures during assembly.

Memory IC Selection Notes

Select this component when a 200 MHz SDRAM with TSOP II packaging is required. Compare with NDS66PT5-16IT if lower speed or different temperature ratings are acceptable. Consider NDS66PBA-20IT for FBGA package alternatives within the same series.

Memory IC Part Context

Part of the NDS66P series from Insignis Technology Corporation, a fabless DRAM manufacturer. This series focuses on providing cost-effective memory solutions with ISO 9001 certified quality standards. The NDS66PT5-20ET represents a specific speed and package variant within this product line.

Memory IC Replacement Considerations

NDS66PT5-20IT shares similar electrical characteristics but may differ in temperature rating. NDS66PT5-16ET offers a lower clock frequency option. Verify pinout and timing parameters before substitution.