NDS76PBA-20ET

Memory IC Overview

The NDS76PBA-20ET is a Synchronous Dynamic Random Access Memory (SDRAM) integrated circuit manufactured by Insignis Technology Corporation. It provides a storage capacity of 128 Megabits, organized as 8 Megawords by 16 bits. The device operates with an LVTTL interface and supports a clock frequency of 200 MHz, achieving a typical access time of 4.5 nanoseconds. It functions within a supply voltage range of 3V to 3.6V and is rated for industrial temperatures from -40°C to 85°C. The component is housed in a 54-pin Thin-Shrink Small Outline Package (TSOP II).

Memory IC Feature Summary

• Supports high-speed parallel data transfer via LVTTL interface.
• Designed for volatile memory applications requiring fast access times.
• Operates reliably across extended industrial temperature ranges.

Memory IC Applications

• Embedded systems requiring onboard volatile memory.
• Industrial control units needing robust environmental tolerance.
• Consumer electronics utilizing standard DRAM architectures.

Memory IC Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm package type and speed grade. Ensure compatibility with system voltage levels and timing requirements before integration. Confirm availability status through authorized channels as distribution may vary.

Memory IC Selection Notes

Select this component when a 128Mb density with 16-bit width is required. Consider the TSOP II package for surface-mount assembly constraints. Verify that the 200MHz performance meets the target system bus speed requirements.

Memory IC Part Context

This part belongs to the NDS76 series of SDRAM devices. It shares architectural similarities with other variants in the family, differing primarily in speed grades and packaging options. The series targets general-purpose memory applications requiring standard SDRAM functionality.

Memory IC Replacement Considerations

NDS76PBA-20IT TR