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Product Detailed Parameters
- Description：DIODE ARR SIC 1200V 10A TO247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：10A
- Voltage - Forward (Vf) (Max) @ If：1.75 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：200 µA @ 1200 V
- Operating Temperature - Junction：-55°C ~ 175°C
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The NDSH20120CDN is a Silicon Carbide (SiC) Schottky Diode from onsemi's EliteSiC Gen2.0 series, housed in a TO-247-3LD package. It features a dual-anode common-cathode configuration with a peak repetitive reverse voltage of 1200 V and a continuous forward current of 20 A per device at a case temperature below 145°C. The maximum junction temperature is rated at 175°C, and it exhibits avalanche capability of 49 mJ.
Feature Summary
- Eliminates reverse recovery current and forward recovery effects for superior switching performance
- Features positive temperature coefficient characteristics to facilitate ease of paralleling
- Provides high surge current capacity and robust thermal performance
Applications
- General purpose power applications
- Switching Mode Power Supplies (SMPS)
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Power switching circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status and exemption codes prior to procurement. Ensure thermal management aligns with the specified junction-to-case resistance limits. Validate that the application environment remains within the stated operating temperature range.
Selection Notes
Select this component for designs requiring high-frequency operation and reduced electromagnetic interference. Consider its low capacitive charge and zero reverse recovery for efficiency gains. Evaluate thermal constraints carefully due to the dual-anode layout. Ensure the circuit design accommodates the specified avalanche energy rating if transient events are expected.
Part Context
This device belongs to onsemi's EliteSiC second-generation silicon carbide diode family. It utilizes advanced SiC technology to outperform traditional silicon rectifiers in reliability and switching speed. The dual-anode common-cathode structure allows for flexible integration in bridge or synchronous rectifier topologies.
Replacement Considerations
Consult official substitution guides for verified alternatives. Generic replacements may not match the specific avalanche rating or thermal characteristics.
