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The CEL NE67818-A is an NPN bipolar RF transistor designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 6V and supports a continuous collector current of 100mA. The device features a cutoff frequency of 12GHz, enabling effective performance in microwave signal processing. It dissipates up to 200mW of power and provides a gain of 13dB at 30mA and 3V bias conditions. Packaged in the SC-82A (SOT-343) surface-mount format, it integrates compact design with reliable RF amplification capabilities.
Verify the specific ordering suffix, such as -T1-A, against the manufacturer's official documentation to ensure correct tape-and-reel packaging configuration. Confirm RoHS compliance status and active production status directly with CEL or authorized distributors before finalizing procurement orders to avoid supply chain discrepancies.
Select this component when designing circuits requiring NPN RF transistors with 12GHz cutoff frequencies and 6V voltage ratings. Ensure the application board supports SOT-343 footprints and that thermal management accommodates 200mW dissipation. Validate biasing requirements align with the specified 30mA/3V test conditions for optimal gain performance.
This part belongs to the CEL NE6xxx series of bipolar RF transistors. These devices are engineered for radio frequency applications, offering a balance of gain, voltage handling, and high-speed switching. The NE67818-A specifically targets microwave bands, distinguishing itself within the family through its 12GHz operational limit and low-voltage compatibility.
Cross-reference with other NPN RF transistors from CEL featuring similar 12GHz specifications and SOT-343 packages. Verify pinout compatibility and electrical parameters like Vceo and fT before substitution to maintain circuit integrity.