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The NE68030-T1 is an NPN epitaxial silicon high-frequency transistor from the NE680 series, designed for low noise and high gain applications. It features a gain bandwidth product (fT) of 10 GHz at VCE = 6 V and IC = 10 mA. The device supports operation up to 6 GHz with a collector current maximum of 35 mA. Key electrical characteristics include a noise figure of 1.7 dB at 2 GHz and 2.9 dB at 4 GHz (VCE = 6 V, IC = 5 mA). Associated gain reaches 9.4 dB at 2 GHz and 5.3 dB at 4 GHz under the same conditions. The component utilizes a SOT-323 style package (Outline 30) with a total power dissipation rating of 150 mW.
Verify the specific suffix T1 corresponds to the required tape and reel packaging configuration before ordering. Confirm that the NE68030 variant meets the thermal and electrical requirements for the target design, as datasheet values are based on standard test conditions at 25°C ambient temperature.
Select this component when a high fT NPN transistor is needed for low-noise amplification below 6 GHz. Compare noise figures and associated gains against alternative packages like NE68033 or NE68039 if higher power dissipation or different pin configurations are required. Ensure biasing circuits support the specified VCE and IC ranges for optimal performance.
The NE680 series comprises NPN silicon transistors available in multiple surface mount packages including chip, SOT-23, SOT-143, and SOT-323 styles. The NE68030 specifically denotes the SOT-323 style package within this family. All variants share similar core electrical characteristics but differ in thermal resistance and physical dimensions.
Direct substitutes within the NE680 series include NE68033 (SOT-23) and NE68039 (SOT-143), though package differences require layout adjustments. Cross-family replacements should match the 10 GHz fT and low noise specifications while verifying pinout compatibility.