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Product Detailed Parameters
- Description：IGBT 500V 18A TO-252
- Series：-
- Mfr：Littelfuse Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：500 V
- Current - Collector (Ic) (Max)：18 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 4.5V, 7A
- Power - Max：115 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：-
- Td (on/off) @ 25°C：420ns/2.9µs
- Test Condition：300V, 1kOhm, 5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252 (DPAK)
- Grade：-
- Qualification：-
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Overview
The NGD18N45CLBT4G is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Littelfuse Inc. It is designed for surface mount applications and housed in a TO-252 (DPAK) package with a tape and reel configuration. The device features a collector-emitter breakdown voltage of 500V and a maximum continuous collector current of 18A. With a power dissipation rating of 115W, it serves as a robust switching component for medium-power electronic circuits requiring high voltage handling capabilities.
Feature Summary
- Single N-channel IGBT structure optimized for surface mount integration
- High voltage blocking capability suitable for demanding power environments
- Standard gate input interface compatible with common driver logic
Applications
- Switching elements in AC motor drive systems
- Power conversion stages within industrial inverters
- Output stages in high-frequency DC-DC converters
Procurement Notes
Verify the specific ordering suffix to ensure the correct packaging variant matches your assembly requirements. Confirm that the thermal management design accommodates the specified power dissipation limits under actual operating conditions. Cross-reference the datasheet electrical characteristics against your circuit's worst-case stress parameters to guarantee reliable long-term performance.
Selection Notes
Choose this component when a surface mount solution is required for medium-power switching applications. Ensure the PCB layout supports the thermal requirements of the TO-252 package. Evaluate the gate charge specifications against your driver capabilities to optimize switching speed and minimize losses during operation.
Part Context
This part belongs to the category of discrete semiconductor power devices, specifically single IGBTs. It represents a standard offering for applications needing isolated gate bipolar transistor technology in a compact form factor. The product line focuses on providing reliable switching performance for various industrial and consumer electronics power stages.
Replacement Considerations
Consult official Littelfuse documentation or authorized distributors for verified substitute part numbers. Do not assume pin-compatible alternatives without confirming electrical parameter alignment. Verify that any replacement maintains the same voltage and current ratings to prevent circuit failure.
