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Product Detailed Parameters
- Description：IGBT NPT 600V 30A TO-220AB
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 15A
- Power - Max：117 W
- Switching Energy：550µJ (on), 350µJ (off)
- Input Type：Standard
- Gate Charge：88 nC
- Td (on/off) @ 25°C：65ns/170ns
- Test Condition：400V, 15A, 22Ohm, 15V
- Reverse Recovery Time (trr)：270 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The NGTB15N60S1EG is a short-circuit rated Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features an N-channel configuration with a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 15 A at 25°C. The device utilizes the Power MESH™ technology to achieve low on-state voltage drop, enhancing efficiency in low-frequency switching applications up to 1 kHz. It is housed in a TO-220 package and includes an integrated antiparallel diode characterized by soft and fast recovery properties.
Feature Summary
- Short-circuit rated capability for robust protection against fault conditions
- Power MESH™ technology ensuring extremely low on-state voltage drop
- Integrated antiparallel diode with soft and fast recovery characteristics
Applications
- Low-frequency power conversion systems operating up to 1 kHz
- Industrial motor drives and control circuits
- High-efficiency power supply designs requiring fault tolerance
Procurement Notes
Verify the specific ordering suffix and revision level against the official onsemi datasheet to ensure compatibility with design requirements. Confirm that the component meets all relevant environmental and safety certifications required for the target application before finalizing procurement decisions.
Selection Notes
Select this IGBT for applications requiring high reliability under short-circuit stress and efficient performance at lower switching frequencies. Evaluate the thermal management needs based on the 15 A current rating and the specific saturation voltage characteristics provided in the electrical parameters table.
Part Context
This component belongs to onsemi's lineup of short-circuit rated IGBTs designed for industrial and consumer markets. It represents a solution combining high voltage blocking capability with improved conduction losses through advanced trench gate technology, suitable for replacing older generation devices in similar voltage and current classes.
Replacement Considerations
Review alternative part numbers such as NGTB15N60EG or NGTG15N60S1EG from the same manufacturer family. Ensure that any substitute maintains identical pinout, voltage ratings, and short-circuit withstand time specifications to guarantee functional equivalence without circuit redesign.
