NGTB40N120SWG

NGTB40N120SWG

  • Description:IGBT TRENCH 1200V 80A TO-247-3
  • Series:-

SKU:9f441237262f Category: Brand:

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Product Detailed Parameters

  • Description:IGBT TRENCH 1200V 80A TO-247-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • IGBT Type:Trench
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):80 A
  • Current - Collector Pulsed (Icm):200 A
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 40A
  • Power - Max:535 W
  • Switching Energy:3.4mJ (on), 1.1mJ (off)
  • Input Type:Standard
  • Gate Charge:313 nC
  • Td (on/off) @ 25°C:116ns/286ns
  • Test Condition:600V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr):240 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

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NGTB40N120SWG

Overview

The NGTB40N120SWG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 40 A at 25 °C. The device utilizes Ultra Field Stop technology to optimize switching performance and conduction losses. It is housed in a TO-247 package designed for through-hole mounting, supporting high-power industrial applications with robust thermal characteristics.

Feature Summary

  • Ultra Field Stop technology for optimized efficiency
  • High voltage blocking capability suitable for demanding power circuits
  • Robust packaging for reliable thermal management

Applications

  • Inverter welding equipment
  • Industrial motor drives
  • Switched-mode power supplies

Part Context

This component belongs to onsemi's discrete IGBT portfolio, specifically engineered for high-power conversion tasks. The NGTB series leverages advanced trench gate field-stop architectures to deliver superior performance compared to standard planar technologies, ensuring efficient operation in high-voltage environments.

NGTB40N120SWGNGTB40N120SWG

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