SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NGTB40N120SWG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 40 A at 25 °C. The device utilizes Ultra Field Stop technology to optimize switching performance and conduction losses. It is housed in a TO-247 package designed for through-hole mounting, supporting high-power industrial applications with robust thermal characteristics.
This component belongs to onsemi's discrete IGBT portfolio, specifically engineered for high-power conversion tasks. The NGTB series leverages advanced trench gate field-stop architectures to deliver superior performance compared to standard planar technologies, ensuring efficient operation in high-voltage environments.