NGTB75N60SWG

Overview

The NGTB75N60SWG is a 600 V, 75 A Insulated Gate Bipolar Transistor (IGBT) in a TO-247 package. It features Trench construction with a co-packaged soft fast reverse recovery diode. Key electrical parameters include a collector-emitter saturation voltage of 1.70 V at 75 A and 25°C, and a turn-off switching loss of 1.0 mJ under standard test conditions. The device supports a maximum junction temperature of 175°C and offers 5 µs short-circuit withstand capability.

Feature Summary

• Robust Trench construction for superior performance in demanding switching applications
• Integrated soft and fast co-packaged free wheeling diode with low forward voltage
• Optimized for high speed switching with minimal switching loss
• Capable of withstanding short-circuit events for 5 microseconds

Applications

• Inverter welding equipment

Procurement Notes

Verify the specific ordering suffix 'G' indicates a lead-free package configuration as documented in the manufacturer's ordering information. Confirm that the component is supplied in rails containing 30 units per package. Ensure the procurement documentation matches the publication order number NGTB75N60SW/D to guarantee authenticity and correct revision status.

Selection Notes

Select this component for applications requiring high current handling up to 100 A pulsed and robust thermal management capabilities. The TO-247 package provides a thermal resistance junction-to-case of 0.28 °C/W for the IGBT. Consider the integrated diode characteristics when designing circuits where freewheeling paths are required without external components.

Part Context

This part belongs to the NGTB series of Insulated Gate Bipolar Transistors manufactured by onsemi. The series utilizes trench gate field-stop technology to balance conduction and switching losses. The specific model is designed for industrial power conversion tasks, specifically targeting welding inverter topologies where efficiency and ruggedness are critical.

Replacement Considerations

Direct replacements must match the 600 V rating, TO-247 package, and similar electrical characteristics. Verify pinout compatibility and thermal resistance values before substitution. Cross-referencing with other trench-gate IGBTs from the same manufacturer family may provide compatible alternatives if availability is constrained.