NHUMB10F

Overview

The NHUMB10F is a PNP/PNP Resistor-Equipped double Transistor (RET) from Nexperia, housed in an SOT363 (SC-88) surface-mount package. It features two integrated PNP transistors with built-in bias resistors: R1 = 2.2 kΩ and R2 = 47 kΩ. Key electrical parameters include a collector-emitter voltage of -80 V, output current of -100 mA, and total power dissipation of 350 mW. The device exhibits a DC current gain (hFE) of at least 100 at -10 mA and -5 V, with a transition frequency of 150 MHz. It is AEC-Q101 qualified for automotive applications.

Feature Summary

• Integrates dual PNP transistors with fixed bias resistors to simplify circuit design and reduce component count.
• Provides high breakdown voltage capability suitable for demanding digital switching environments.
• Qualified under the AEC-Q101 standard for reliability in automotive electronic systems.

Applications

• Digital logic applications
• Cost-effective alternative to BC856 series transistors
• Control of IC inputs
• Switching loads

Procurement Notes

Verify the specific ordering suffix 'F' against the official Nexperia datasheet or distributor documentation to confirm packaging details such as tape and reel specifications. Ensure the selected variant matches the required resistor values and package type for your design implementation.

Selection Notes

Select the NHUMB10F when a dual PNP configuration with specific 2.2 kΩ and 47 kΩ bias resistors is required. This part serves as a direct replacement for discrete transistor pairs in space-constrained designs. Verify that the 80V rating and 100mA current limit align with the target application's electrical requirements.

Part Context

The NHUMB10F belongs to the NHUMB10/13/9 series of PNP/PNP resistor-equipped double transistors. These components are designed to replace multiple discrete components in compact surface-mount layouts. The series offers various resistor combinations while maintaining consistent electrical characteristics and package dimensions across variants.

Replacement Considerations

Direct functional equivalents within the same series include NHUMB13 and NHUMB9, which differ primarily in internal resistor values. For NPN/NPN configurations, consider the NHUMH10. For mixed NPN/PNP setups, the NHUMD10 is the complementary option. Ensure resistor ratios match the original design intent when substituting.

FAQ

What are the specific values of the built-in bias resistors for the NHUMB10?

The NHUMB10 features a base resistor (R1) of 2.2 kΩ and an emitter resistor (R2) of 47 kΩ.

Is the NHUMB10F suitable for automotive applications?

Yes, the NHUMB10 series is qualified according to the AEC-Q101 standard for stress test qualification of discrete semiconductors.

What is the maximum collector-emitter voltage for this device?

The maximum collector-emitter voltage (VCEO) is -80 V.