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The NHUMB10 is a PNP/PNP Resistor-Equipped double Transistor (RET) housed in an SOT363 (SC-88) plastic surface-mounted package. It integrates two PNP transistors with built-in bias resistors, specifically R1 at 2.2 kΩ and R2 at 47 kΩ. The device supports a collector-emitter voltage of -80 V and an output current of -100 mA per transistor. Key electrical characteristics include a DC current gain (hFE) of 100 minimum at -10 mA, a transition frequency of 150 MHz typical, and a total power dissipation of 350 mW for the dual device at 25 °C ambient temperature.
Verify the specific part number suffix against Nexperia's official ordering information to confirm the correct resistor values and manufacturing site code. Ensure the procurement channel provides valid traceability documentation required for AEC-Q101 qualified components used in automotive systems.
Select the NHUMB10 when a compact dual PNP solution with integrated base resistors is required. Compare the 2.2 kΩ input resistance against alternatives like the NHUMB13 or NHUMB9 if different biasing levels are needed. Verify that the SOT363 package dimensions fit the target PCB layout constraints.
This component belongs to the NHUMB10/13/9 series of PNP/PNP Resistor-Equipped double Transistors. It serves as a cost-saving alternative to discrete transistor pairs in digital circuits. The series shares the same SOT363 package but varies in internal resistor values to suit different drive requirements.
Direct substitutes within the same family include the NHUMB13 and NHUMB9, which share the SOT363 package but feature different R1 values of 4.7 kΩ and 10 kΩ respectively. Cross-family replacements require verification of pin compatibility and electrical parameter alignment.