NHUMB11F

Overview

The NHUMB11F is a PNP/PNP Resistor-Equipped double Transistor (RET) from Nexperia, housed in an SOT363 (SC-88) surface-mounted package. It features two integrated PNP transistors with built-in bias resistors of 10 kΩ each (R1 and R2). The device supports a maximum collector-emitter voltage (VCEO) of -80 V and a continuous output current (IO) of -100 mA per transistor. Total power dissipation is rated at 350 mW. Key electrical characteristics include a DC current gain (hFE) of 50 at -10 mA, a saturation voltage (VCEsat) of -100 mV, and a transition frequency (fT) of 150 MHz. It is AEC-Q101 qualified for automotive applications.

Feature Summary

• Integrated dual PNP transistors with built-in bias resistors to simplify circuit design
• High breakdown voltage capability of 80 V for robust operation
• AEC-Q101 qualified for automotive reliability standards
• Compact SOT363 package reduces component count and placement costs

Applications

• Digital logic applications
• Cost-effective alternative to BC856 series transistors
• Control of IC inputs
• Switching loads

Procurement Notes

Verify the specific suffix 'F' against official Nexperia documentation to confirm packaging details such as reel size or tape configuration. Ensure compatibility with standard SOT363 footprints during PCB layout. Confirm RoHS compliance status through the latest manufacturer datasheet revision before finalizing procurement specifications.

Selection Notes

Select the NHUMB11F when a dual PNP configuration with fixed 10 kΩ base resistors is required. Compare its 80 V rating against lower-voltage alternatives if higher headroom is needed. Consider the 100 mA current limit for load switching requirements. Evaluate thermal performance based on the 350 mW total power dissipation limit in the target application environment.

Part Context

The NHUMB11F belongs to the NHUMB11/1/2 series of resistor-equipped double transistors. It shares the same SOT363 package and general structure as the NHUMB11 and NHUMB2 variants, differing primarily in the resistance values of the internal bias resistors. This series is designed to replace discrete resistor-transistor combinations in compact digital circuits.

Replacement Considerations

Direct functional equivalents within the same series include the NHUMB11 and NHUMB2, though their internal resistor values differ. For pin-compatible replacements with different resistor values, consider the NHUMB1. Verify that any substitute maintains the required 80 V breakdown voltage and 100 mA current rating.