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The NHUMB11X is a PNP/PNP Resistor-Equipped double Transistor (RET) from Nexperia, housed in an SOT363 (SC-88) surface-mounted package. It features two integrated PNP transistors with built-in bias resistors of 10 kΩ each. Key electrical parameters include a collector-emitter voltage (VCEO) of -80 V, a maximum output current (IO) of -100 mA per transistor, and a total power dissipation (Ptot) of 350 mW. The device operates within a temperature range of -55 °C to +150 °C and has a transition frequency (fT) of 150 MHz.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct resistor values and packaging configuration. Confirm that the requested part number matches the exact series requirements for your design. Always consult the most recent product data sheet before initiating or completing a design to account for any potential specification updates.
Select this component when space-saving dual PNP configurations with integrated biasing are required. The SOT363 package offers a compact footprint suitable for high-density circuit designs. Ensure the application voltage does not exceed the -80 V rating and that the thermal management supports the specified power dissipation limits under operating conditions.
The NHUMB11X belongs to the NHUMB1/1/2 series of PNP/PNP resistor-equipped double transistors. This family shares the same SOT363 package but differs in internal resistor values. The NHUMB11 variant specifically utilizes 10 kΩ resistors for both channels, distinguishing it from other series members like the NHUMB1 or NHUMB2 which have different resistance configurations.
Direct replacements within the same series include NHUMB1 and NHUMB2, though their internal resistor values differ. For NPN/NPN equivalents, consider the NHUMH11. For mixed NPN/PNP configurations, the NHUMD3 is the complementary option. Verify resistor values match the original design requirements when substituting.