NHUMB13-QX

Overview

The NHUMB13-QX is a pre-biased bipolar junction transistor (BJT) array manufactured by Nexperia. It contains two PNP transistors in a single surface-mount package. The device features a collector-emitter breakdown voltage of 80V and a maximum collector current of 100mA. It operates with a transition frequency of 150MHz and has a maximum power dissipation of 235mW. The saturation voltage is specified as 100mV at an input base current of 500µA and collector current of 10mA.

Feature Summary

• Integrated dual PNP pre-biased configuration for simplified circuit design
• High-frequency switching capability suitable for signal processing applications
• Surface-mount packaging for automated assembly processes

Applications

• High-frequency switching circuits
• Signal processing modules
• RF application interfaces

Procurement Notes

Verify the specific ordering suffix to ensure the correct tape and reel quantity matches your production requirements. Confirm that the component meets all necessary automotive or industrial qualification standards required for your final product design before placing orders.

Selection Notes

Select this component when a compact solution for dual PNP switching is required. Ensure the 80V voltage rating and 100mA current limit align with your circuit's operational parameters. Consider the 6-TSSOP package dimensions for PCB layout constraints.

Part Context

This part belongs to Nexperia's portfolio of pre-biased bipolar transistor arrays. These devices integrate biasing resistors directly with the transistor die, reducing external component count. The NHUMB13-QX specifically addresses needs for space-constrained designs requiring reliable PNP switching functionality.

Replacement Considerations

Check for direct substitutes within the same Nexperia pre-biased BJT family. Verify pin compatibility and electrical specifications against alternative manufacturers' offerings if supply chain diversification is necessary.